MPQ7053

SILICON

NPN/PNP COMPLEMENTARY

QUAD TRANSISTOR

DESCRIPTION:

The CENTRAL SEMICONDUCTOR MPQ7053 type is

comprised of two independent silicon NPN transistors

and two independent silicon PNP transistors mounted

in a 14-pin DIP, designed for general purpose amplifier

and switching applications.

MARKING: FULL PART NUMBER

MAXIMUM RATINGS: (TA=25°C)

SYMBOL

UNITS

Collector-Base Voltage

VCBO

250

V

Collector-Emitter Voltage

VCEO

250

V

Emitter-Base Voltage

VEBO

5.0

V

Continuous Collector Current

IC

500

mA

Power Dissipation (per transistor)

PD

750

mW

Power Dissipation (total package)

PD

1.7

W

Operating and Storage Junction Temperature

TJ, Tstg

-65 to +150

°C

ELECTRICAL CHARACTERISTICS PER TRANSISTOR: (TA=25°C)

SYMBOL

TEST CONDITIONS

MIN

MAX

UNITS

ICBO

VCB=180V

250

nA

IEBO

VEB=3.0V

100

nA

BVCBO

IC=100μA

250

V

BVCEO

IC=1.0mA

250

V

BVEBO

IE=100μA

5.0

V

VCE(SAT)

IC=20mA, IB=2.0mA

0.70

V

VBE(SAT)

IC=20mA, IB=2.0mA

0.90

V

hFE

VCE=10V, IC=1.0mA

25

hFE

VCE=10V, IC=10mA

35

hFE

VCE=10V, IC=30mA

25

fT

VCE=20V, IC=10mA, f=100MHz

50

MHz

Cob

VCB=20V, IE=0, f=1.0MHz

6.0

pF

Cib

VEB=3.0V, IC=0, f=1.0MHz (NPN)

50

pF

Cib

VEB=3.0V, IC=0, f=1.0MHz (PNP)

75

pF

TO-116 CASE

R0 (10-March 2014)

www.centr a lsemi.com