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RF5322 数据表(PDF) 2 Page - RF Micro Devices |
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RF5322 数据表(HTML) 2 Page - RF Micro Devices |
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2 / 12 page ![]() 2 of 12 RF5322 DS110618 7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com. Absolute Maximum Ratings Parameter Rating Unit Supply Voltage -0.5 to +5.0 V DC Power Control Voltage (V REG) -0.5 to 3.5 V DC Supply Current 400 mA Input RF Power +5 dBm Operating Ambient Temperature -30 to +85 °C Storage Temperature -40 to +150 °C Moisture sensitivity JEDEC Level 2 ESD HBM 450 V MM 50 V Parameter Specification Unit Condition Min. Typ. Max. Overall Temperature=+25°C, VCC=3.3V, VREG=2.8V pulsed at 1% to 100% duty cycle, Frequency=2450MHz, circuit per evaluation board schematic, unless otherwise specified Frequency 2.40 2.50 GHz IEEE802.11g IEEE802.11n Output Power 18 dBm At max data rate, OFDM modulation EVM* 2.5 4 % RMS, mean Gain 23.5 24.5 dB At +18dBm RF POUT and 54Mbps Gain Variance 1.25 ±dB -30°C to +85°C Power Detector POUT=8dBm 0.4 0.7 V POUT=18dBm 1.25 1.35 1.50 V Current Operating 130 145 mA At +18dBm RF POUT and 54Mbps 11b Operating 175 mA Quiescent 95 110 mA Data rate at <3.5% EVM RMS, mean, T=-30°C to +50°C IREG Current 2 mA VCC=+3.3VDC Shutdown 10 A Power Supply 3.0 3.3 4.5 VDC Operating Range VREG1, VREG2 Input Voltage 2.75 2.85 2.9 VDC Operating Range Output VSWR 10:1 Input Return Loss -15 -10 dB Turn-on Time** 0.5 1.0 S Output stable to within 90% of final gain Second Harmonic -23 -15 dBm 20dBm POUT and 1Mbps Third Harmonic -35 dBm 20dBm POUT and 1Mbps Caution! ESD sensitive device. Exceeding any one or a combination of the Absolute Maximum Rating conditions may cause permanent damage to the device. Extended application of Absolute Maximum Rating conditions to the device may reduce device reliability. Specified typical perfor- mance or functional operation of the device under Absolute Maximum Rating condi- tions is not implied. RoHS status based on EUDirective2002/95/EC (at time of this document revision). The information in this publication is believed to be accurate and reliable. However, no responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any infringement of patents, or other rights of third parties, resulting from its use. No license is granted by implication or otherwise under any patent or patent rights of RFMD. RFMD reserves the right to change component circuitry, recommended appli- cation circuitry and specifications at any time without prior notice. |
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