CMPFJ174

CMPFJ175

CMPFJ176

CMPFJ177

SURFACE MOUNT SILICON

P-CHANNEL JFETS

DESCRIPTION:

The CENTRAL SEMICONDUCTOR CMPFJ174

Series devices are epoxy molded P-Channel JFETs

manufactured in an SOT-23 case, designed for low

level amplifier applications.

MAXIMUM RATINGS: (TA=25°C)

SYMBOL

UNITS

Gate-Drain Voltage

VGD

30

V

Gate-Source Voltage

VGS

30

V

Gate Current

IG

50

mA

Power Dissipation

PD

350

mW

Operating and Storage Junction Temperature

TJ, Tstg

-65 to +150

°C

Thermal Resistance

ΘJA

357

°C/W

ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted)

CMPFJ174

CMPFJ175

CMPFJ176

CMPFJ177

SYMBOL

TEST CONDITIONS

MIN

MAX

MIN

MAX

MIN

MAX

MIN

MAX

UNITS

IGSS

VGS=20V

-

1.0

-

1.0

-

1.0

-

1.0

nA

IDSS

VDS=15V

20

100

7.0

60

2.0

25

1.5

20

mA

BVGSS

IG=1.0μA

30

-

30

-

30

-

30

-

V

VGS(off)

VDS=15V, ID=10nA

5.0

10

3.0

6.0

1.0

4.0

0.8

2.5

V

rDS(ON)

VDS=0.1V

-

85

-

125

-

250

-

300

Ω

MARKING CODES: CMPFJ174: 6V

CMPFJ175: 6W

CMPFJ176: 6X

CMPFJ177: 6Y

SOT-23 CASE

R6 (2-May 2014)

www.centr a lsemi.com