(SEE REVERSE SIDE)

R1

CS55BZ

CS55DZ

SILICON CONTROLLED RECTIFIER

0.8 AMPS, 200 AND 400 VOLTS

TO-92 CASE

DATA SHEET

DESCRIPTION

The CENTRAL SEMICONDUCTOR CS55BZ series type are epoxy molded silicon controlled rectifiers designed

for applications requiring extremely low gate sensitivity.

MAXIMUM RATINGS (TA=25°C unless otherwise noted)

SYMBOL

CS55BZ

CS55DZ

UNITS

Peak Repetitive Off-State Voltage

VDRM,VRRM

200

400

V

RMS On-State Current (TC=60oC)

IT(RMS)

0.8

A

Peak One Cycle Surge (t=10ms)

ITSM

10

A

I2t Value for Fusing (t=10ms)

I2t

0.24

A2s

Peak Gate Power (tp=10

µs)

PGM

2.0

W

Average Gate Power Dissipation

PG(AV)

0.1

W

Peak Gate Current (tp=10

µs)

IGM

1.0

A

Peak Gate Voltage (tp=10

µs)

VGM

8.0

V

Storage Temperature

Tstg

-40 to +125

°C

Junction Temperature

TJ

-40 to +125

°C

Thermal Resistance

ΘJA

200

°C/W

Thermal Resistance

ΘJC

100

°C/W

ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise noted)

SYMBOL

TEST CONDITIONS

MIN

TYP

MAX

UNITS

IDRM,IRRM

Rated VDRM,VRRM, RGK=1KΩ

1.00

µA

IDRM,IRRM

Rated VDRM,VRRM, RGK=1KΩ, TC=125°C

100

µA

IGT

VD=12V

20

µA

IH

RGK=1KΩ

5.00

mA

VGT

VD=12V

0.8

V

VTM

ITM=1.0A

1.70

V

dv/dt

VD=.67 x VDRM, RGK=1KΩ, TC=125°C

25

V/

µs