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ZDT1053 数据表(PDF) 4 Page - Diodes Incorporated

部件名 ZDT1053
功能描述  75V DUAL NPN HIGH GAIN MEDIUM POWER TRANSISTOR IN SM-8
PDF  7 Pages
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制造商  DIODES [Diodes Incorporated]
网页  http://www.diodes.com
标志 DIODES - Diodes Incorporated

ZDT1053 数据表(HTML) 4 Page - Diodes Incorporated

  ZDT1053_15 Datasheet HTML 1Page - Diodes Incorporated ZDT1053_15 Datasheet HTML 2Page - Diodes Incorporated ZDT1053_15 Datasheet HTML 3Page - Diodes Incorporated ZDT1053_15 Datasheet HTML 4Page - Diodes Incorporated ZDT1053_15 Datasheet HTML 5Page - Diodes Incorporated ZDT1053_15 Datasheet HTML 6Page - Diodes Incorporated ZDT1053_15 Datasheet HTML 7Page - Diodes Incorporated  
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ZDT1053
Document number: DS33206 Rev. 4 - 2
4 of 7
www.diodes.com
April 2015
© Diodes Incorporated
ZDT1053
A Product Line of
Diodes Incorporated
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
Min
Typ
Max
Unit
Test Condition
Collector-Base Breakdown Voltage
BVCBO
150
245
V
IC = 100µA
Collector-Emitter Breakdown Voltage (Note 9)
BVCEO
75
100
V
IC = 10mA
Collector-Emitter Breakdown Voltage
BVCES
150
245
V
IC = 100µA
Collector-Emitter Breakdown Voltage
BVCEV
150
245
V
IC = 100µA, VEB = 1V
Emitter-Base Breakdown Voltage
BVEBO
7
8.8
V
IE = 100µA
Collector Cut-Off Current
ICBO
<1
10
nA
VCB = 120V
Emitter Cut-Off Current
IEBO
<1
10
nA
VEB = 5.6V
Collector Emitter Cut-Off Current
ICES
<1
10
nA
VCES = 120V
DC Current Transfer Static Ratio (Note 9)
hFE
260
420
IC = 10mA, VCE = 2V
IC = 1A, VCE = 2V
IC = 2A, VCE = 2V
IC = 5A, VCE = 2V
IC = 10A, VCE = 2V
300
450
1200
150
220
30
50
15
Collector-Emitter Saturation Voltage (Note 9)
VCE(sat)
17
25
mV
IC = 0.2A, IB = 20mA
IC = 1A, IB = 50mA
IC = 1A, IB = 10mA
IC = 2A, IB = 50mA
IC = 5A, IB = 250mA
70
100
120
150
150
200
300
440
Base-Emitter Saturation Voltage (Note 9)
VBE(SAT)
1100
1200
mV
IC = 5A, IB = 250mA
Base-Emitter Turn-On Voltage (Note 9)
VBE(ON)
1000
1100
mV
IC = 5A, VCE = 2V
Transitional Frequency
fT
140
MHz
IC = 50mA, VCE = 10V,
f = 100MHz
Output Capacitance
COBO
21
30
pF
VEB = 10V, f = 1MHz
Switching Time
tON
90
ns
VCC = 50V, IC = 2A,
IB1 = -IB2 = 20mA
tOFF
750
ns
Note:
9. Measured under pulsed conditions. Pulse width
≤ 300μs. Duty cycle ≤ 2%.



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