CSD-4M

CSD-4N

SURFACE MOUNT

SILICON CONTROLLED RECTIFIERS

4.0 AMP, 600 THRU 800 VOLT

DESCRIPTION:

The CENTRAL SEMICONDUCTOR CSD-4M and

CSD-4N are epoxy molded SCRs designed for sensing

circuit and control system applications.

MARKING: FULL PART NUMBER

MAXIMUM RATINGS: (TC=25°C unless otherwise noted)

SYMBOL

CSD-4M

CSD-4N

UNITS

Peak Repetitive Off-State Voltage

VDRM, VRRM

600

800

V

RMS On-State Current (TC=85°C)

IT(RMS)

4.0

A

Peak One Cycle Surge Current, t=10ms

ITSM

30

A

4.5

Peak Gate Power, tp=20μs

PGM

3.0

W

Average Gate Power Dissipation

PG(AV)

0.2

W

Peak Gate Current, tp=20μs

IGM

1.2

A

Critical Rate of Rise of On-State Current

di/dt

50

A/μs

Operating Junction Temperature

TJ

-40 to +125

°C

Storage Temperature

Tstg

-40 to +150

°C

ELECTRICAL CHARACTERISTICS: (TC=25°C unless otherwise noted)

SYMBOL

TEST CONDITIONS

MIN

TYP

MAX

UNITS

IDRM, IRRM Rated VDRM, VRRM, RGK=1KΩ

10

μA

IDRM, IRRM Rated VDRM, VRRM, RGK=1KΩ, TC=125°C

200

μA

IGT

VD=12V, RL=10Ω

20

38

200

μA

IH

IT=50mA, RGK=1KΩ

0.25

2.0

mA

VGT

VD=12V, RL=10

0.55

0.8

V

VTM

ITM=8.0A, tp=380μs

1.6

1.8

V

dv/dt

10

V/μs

DPAK CASE

R2 (21-January 2013)

www.centr a lsemi.com