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RFGA2012 数据表(PDF) 2 Page - RF Micro Devices |
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RFGA2012 数据表(HTML) 2 Page - RF Micro Devices |
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2 / 12 page ![]() 2 of 12 RFGA2012 DS110215 7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com. Absolute Maximum Ratings Parameter Rating Unit Collector-to-Emitter Voltage (VCE ) 5.5 V DC Supply Current (Ic) 35 mA CW Input Power, 2:1 Output VSWR, 5.0V +20 dBm CW Input Power, 2:1 Output VSWR, 5.5V +15 dBm Output Load VSWR at P3dB 5:1 dBm Operating Temperature Range (TL) -40 to +85 °C Operating Junction Temperature (TJ) 150 °C Max Storage Temperature -40 to +150 °C ESD Rating - Human Body Model (HBM) Class 1C Moisture Sensitivity Level MSL 1 Notes: 1. The maximum ratings must all be met simultaneously. 2. PDISS=PDC+PRFIN-PRFOUT 3. TJ=TL+ PDISS*RTH Parameter Specification Unit Condition Min. Typ. Max. 150MHz VCC = 3.3V, ICQ = 23mA (includes IBIAS) Frequency 130 150 270 MHz Gain 25 dB Input Return Loss 14 dB Output Return Loss 14 dB P1dB 12.5 dBm OIP3 30 dBm 0dBm/tone, tone spacing = 1MHz Noise Figure 3.8 dB 900MHz VCC = 3.3V, ICQ = 23mA (includes IBIAS) Frequency 869 915 960 MHz Gain 19 dB Input Return Loss 14 dB Output Return Loss 14 dB P1dB 14.5 dBm OIP3 34.5 dBm 0dBm/tone, tone spacing = 1MHz Noise Figure 2.7 dB 1960MHz VCC = 3.3V, ICQ = 23mA (includes IBIAS) Frequency 1800 1960 2200 MHz Gain 14.5 dB Input Return Loss 10 dB Output Return Loss 14.5 dB P1dB 13.5 dBm OIP3 35 dBm 0dBm/tone, tone spacing = 1MHz Noise Figure 1.6 dB Caution! ESD sensitive device. Exceeding any one or a combination of the Absolute Maximum Rating conditions may cause permanent damage to the device. Extended application of Absolute Maximum Rating conditions to the device may reduce device reliability. Specified typical perfor- mance or functional operation of the device under Absolute Maximum Rating condi- tions is not implied. RoHS status based on EUDirective2002/95/EC (at time of this document revision). The information in this publication is believed to be accurate and reliable. However, no responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any infringement of patents, or other rights of third parties, resulting from its use. No license is granted by implication or otherwise under any patent or patent rights of RFMD. RFMD reserves the right to change component circuitry, recommended appli- cation circuitry and specifications at any time without prior notice. |
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