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RFGA2012 数据表(PDF) 2 Page - RF Micro Devices

部件名 RFGA2012
功能描述  InGaP HBT LOW POWER LINEAR AMPLIFIER
PDF  12 Pages
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制造商  RFMD [RF Micro Devices]
网页  http://www.rfmd.com
标志 RFMD - RF Micro Devices

RFGA2012 数据表(HTML) 2 Page - RF Micro Devices

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RFGA2012
DS110215
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.
Absolute Maximum Ratings
Parameter
Rating
Unit
Collector-to-Emitter Voltage (VCE )
5.5
V
DC Supply Current (Ic)
35
mA
CW Input Power, 2:1 Output VSWR, 5.0V
+20
dBm
CW Input Power, 2:1 Output VSWR, 5.5V
+15
dBm
Output Load VSWR at P3dB
5:1
dBm
Operating Temperature Range (TL)
-40 to +85
°C
Operating Junction Temperature (TJ)
150
°C
Max Storage Temperature
-40 to +150
°C
ESD Rating - Human Body Model (HBM)
Class 1C
Moisture Sensitivity Level
MSL 1
Notes:
1. The maximum ratings must all be met simultaneously.
2. PDISS=PDC+PRFIN-PRFOUT
3. TJ=TL+ PDISS*RTH
Parameter
Specification
Unit
Condition
Min.
Typ.
Max.
150MHz
VCC = 3.3V, ICQ = 23mA (includes IBIAS)
Frequency
130
150
270
MHz
Gain
25
dB
Input Return Loss
14
dB
Output Return Loss
14
dB
P1dB
12.5
dBm
OIP3
30
dBm
0dBm/tone, tone spacing = 1MHz
Noise Figure
3.8
dB
900MHz
VCC = 3.3V, ICQ = 23mA (includes IBIAS)
Frequency
869
915
960
MHz
Gain
19
dB
Input Return Loss
14
dB
Output Return Loss
14
dB
P1dB
14.5
dBm
OIP3
34.5
dBm
0dBm/tone, tone spacing = 1MHz
Noise Figure
2.7
dB
1960MHz
VCC = 3.3V, ICQ = 23mA (includes IBIAS)
Frequency
1800
1960
2200
MHz
Gain
14.5
dB
Input Return Loss
10
dB
Output Return Loss
14.5
dB
P1dB
13.5
dBm
OIP3
35
dBm
0dBm/tone, tone spacing = 1MHz
Noise Figure
1.6
dB
Caution! ESD sensitive device.
Exceeding any one or a combination of the Absolute Maximum Rating conditions may
cause permanent damage to the device. Extended application of Absolute Maximum
Rating conditions to the device may reduce device reliability. Specified typical perfor-
mance or functional operation of the device under Absolute Maximum Rating condi-
tions is not implied.
RoHS status based on EUDirective2002/95/EC (at time of this document revision).
The information in this publication is believed to be accurate and reliable. However, no
responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any
infringement of patents, or other rights of third parties, resulting from its use. No
license is granted by implication or otherwise under any patent or patent rights of
RFMD. RFMD reserves the right to change component circuitry, recommended appli-
cation circuitry and specifications at any time without prior notice.



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