 |
数据搜索系统，热门电子元器件搜索 |
|
|
数据搜索系统，热门电子元器件搜索 |
|
ZTX853 数据表(PDF) 1 Page - Diodes Incorporated |
|
|
|||||||||||||||||||||||||||||
ZTX853 数据表(HTML) 1 Page - Diodes Incorporated |
|
|
1 / 3 page  NPN SILICON PLANAR MEDIUM POWER HIGH CURRENT TRANSISTOR ISSUE 3 - NOVEMBER 1995 FEATURES * 100 Volt VCEO * 4 Amps continuous current * Up to 10 Amps peak current * Very low saturation voltage *Ptot=1.2 Watts ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Collector-Base Voltage VCBO 200 V Collector-Emitter Voltage VCEO 100 V Emitter-Base Voltage VEBO 6V Peak Pulse Current ICM 10 A Continuous Collector Current IC 4A Practical Power Dissipation* Ptotp 1.58 W Power Dissipation at Tamb=25°C Ptot 1.2 W Operating and Storage Temperature Range Tj:Tstg -55 to +200 °C *The power which can be dissipated assuming the device is mounted in a typical manner on a P.C.B. with copper equal to 1 inch square minimum ELECTRICAL CHARACTERISTICS (at Tamb= 25°C unless otherwise stated) PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS. Collector-Base Breakdown Voltage V(BR)CBO 200 300 V IC=100µA Collector-Emitter Breakdown Voltag V(BR)CER 200 300 V IC=1µA, RB ≤1KΩ Collector-Emitter Breakdown Voltage V(BR)CEO 100 120 V IC=10mA* Emitter-Base Breakdown Voltage V(BR)EBO 68 V IE=100µA Collector Cut-Off Current ICBO 50 1 nA µ A VCB=150V VCB=150V, Tamb=100°C Collector Cut-Off Current ICER R ≤1KΩ 50 1 nA µ A VCB=150V VCB=150V, Tamb=100°C Emitter Cut-Off Current IEBO 10 nA VEB=6V Collector-Emitter Saturation Voltage VCE(sat) 14 100 160 50 150 200 mV mV mV IC=0.1A, IB=5mA IC=2A, IB=100mA IC=4A, IB=400mA* Base-Emitter Saturation Voltage VBE(sat) 960 1100 mV IC=4A, IB=400mA* E-Line TO92 Compatible ZTX853 3-297 C B E ELECTRICAL CHARACTERISTICS (at Tamb= 25°C) PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS. Base-Emitter Turn-On Voltage VBE(on) 830 950 V IC=4A, VCE=2V* Static Forward Current Transfer Ratio hFE 100 100 50 20 200 200 100 30 300 IC=10mA, VCE=2V IC=2A, VCE=2V* IC=4A, VCE=2V* IC=10A, VCE=2V* Transition Frequency fT 130 MHz IC=100mA, VCE=10V f=50MHz Output Capacitance Cobo 35 pF VCB=10V, f=1MHz Switching Times ton toff 50 1650 ns ns IC=1A, IB!=100mA IB2=100mA, VCC=10V *Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤2% THERMAL CHARACTERISTICS PARAMETER SYMBOL MAX. UNIT Thermal Resistance: Junction to Ambient Junction to Case Rth(j-amb) Rth(j-case) 150 50 °C/W °C/W ZTX853 -40 2.0 1.0 0.0001 50 150 100 Derating curve T -Temperature (°C) Maximum transient thermal impedance Pulse Width (seconds) 10 100 1 0.1 0.01 4.0 3.0 -20 0 20 40 60 80 100 120 200 180 160 140 t1 tP D=t1/tP Case te m peratu re Ambien t tem peratur e D.C. D=0.6 D=0.2 D=0.1 Single Pulse 0.001 0 D=0.05 3-298 |
类似零件编号 - ZTX853_15 |
|
类似说明 - ZTX853_15 |
|
|
|
链接网址 |
| ALLDATASHEET是否为您带来帮助? [ DONATE ] |
关于 Alldatasheet | 广告服务 | 联系我们 | 隐私政策 | 数据表链接 | 链接交换 | 制造商名单 All Rights Reserved©Alldatasheet.com |
| Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
|
Family Site : ic2ic.com |
icmetro.com |
Chinese ▼
English
Chinese
German
Japanese
Russian
Korean
Spanish
French
Italian
Portuguese
Polish
Vietnamese
Indian
Mexican
British
New Zealand
