DRAFT

DRAFT

DRAFT

DRAFT

RF Micro Devices Inc.

7628 Thorndike Road, Greensboro, NC 27409-9421

DS140618

For sales or technical support, contact RFMD at +1.336.678.5570 or customerservice@rfmd.com.

RF MICRO DEVICES

trademarks, and registered trademarks are the property of their respective owners. ©2013, RF Micro Devices, Inc.

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RFPD2580

GaAs/GaN Power Doubler Hybrid

45MHz to 1200MHz

The RFPD2580 is a Hybrid Power Doubler amplifier module.

The part employs GaAs pHEMT die and GaN HEMT die, has

high output capability, and operates from 45MHz to 1200MHz.

It provides excellent linearity and superior return loss

performance with low noise and optimal reliability.

INPUT

OUTPUT

V+

Package: SOT-115J

Features

■ Excellent Linearity

■ Superior Return Loss Performance

■ Extremely Low Distortion

■ Optimal Reliability

■ Low Noise

■ Unconditionally Stable Under All

Terminations

■ Extremely High Output Capability

■ 22.5dB Min. Gain at 1200MHz

■ 450mA Max. at 24V

DC

Applications

■ 45MHz to 1200MHz CATV

Amplifier Systems

Ordering Information

RFPD2580

Box with 50 pieces

Absolute Maximum Ratings

Parameter

Rating

Unit

RF Input Voltage (single tone)

75

dBmV

DC Supply Over-Voltage (5 minutes)

30

V

Storage Temperature

-40 to +100

°C

Operating Mounting Base Temperature

-30 to +100

°C

Caution! ESD sensitive device.

RoHS (Restriction of Hazardous

Substances): Compliant per EU Directive

2011/65/EU.

Exceeding any one or a combination of the Absolute

Maximum Rating conditions may cause permanent

damage to the device. Extended application of Absolute

Maximum Rating conditions to the device may reduce

device reliability. Specified typical performance or

functional operation of the device under Absolute

Maximum Rating conditions is not implied.

RFPD2580