3.6V 0.5W RF Power Amplifier IC for DECT

MA02205AF

Specifications subject to change without notice.

901981 E

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Rating

Symbol

Value

Unit

5.5

Vdc

RF Input Power

3

mW

Junction Temperature

150

°C

Storage Temperature Range

-40 to +150

°C

APP LICATION INFORMATION

T5

L3

C6

C5

N/C

1

2

3

4

5

6

7

8

9

10

11

12

13

14

15

16

T2

C1

C2

T3

T4

C4

C3

T1

L1

R1

L2

Figure 1. Evaluation Board Schematic

List of components:

C1 = 100 pF DLI multilayer ceramic chip capacitor (C11AH101K5TXL)

C2 = 10 pF DLI multilayer ceramic chip capacitor (C11AH1R0B5TXL)

C3 = 0.7 pF DLI multilayer ceramic chip capacitor (C11AH0R7B5TXL)

C4 = 10 pF DLI multilayer ceramic chip capacitor (C11AH1R0B5TXL)

C5 = 2.2 pF DLI multilayer ceramic chip capacitor (C11AH2R2B5TXL)

C6 = 100 pF DLI multilayer ceramic chip capacitor (C11AH101K5TXL) (DC blocking capacitor)

L1 = 2.7 nH Toko chip inductor (TKS2362CTND)

L2 = 3.3 nH Toko chip inductor (TKS2363CTND)

L3 = 27 nH Coilcraft chip inductor (1008CS.270XMBB)

R1 = 300

Ω chip resistor

T1 = 0.19" of 50

Ω==grounded coplanar waveguide (60 mil GETEK board)

T2 = 0.12" of 50

Ω==grounded coplanar waveguide (60 mil GETEK board)

T3 = 0.39" of 75

Ω==grounded coplanar waveguide (60 mil GETEK board)

T4 = 0.11" of 75

Ω==grounded coplanar waveguide (60 mil GETEK board)

T5 = 0.14" of 50

Ω==grounded coplanar waveguide (60 mil GETEK board)

Component layout and printed circuit board drawing for RF IC evaluation board are shown in Figure 9.