Features

• Perfect for 802.11B, HOP, SWAP, HOMERF,

Bluetooth, WDECT, MDS, MMDS

• Single Positive Supply

• Power Added Efficiency As High As 55 Percent

• IP

• Output Power 26.5 dBm @ 3.3 V

• Output Power 28.5 dBm @ 5.0 V

• 100 Percent Duty Cycle

• 2200 to 2600 MHz Operation

• 8 Pin MSOP Full Downset Plastic Package

• Operates Over Wide Ranges of Supply Voltage

Description

The MA02303GJ is an RF power amplifier based on

M/A-COM’s Self-Aligned MSAG

This product is designed for use in 2.4 GHz ISM

products.

For booster applications, it features a low

power “bypass” mode and output power control

RF Power Amplifier IC

for 2.4 GHz ISM

Functional Schematic

Absolute Maximum Ratings

1

1. Beyond these limits, the device may be damaged or device reliability

reduced. Functional operation at absolute-maximum-rated conditions is

not implied.

Package bottom is electrical and thermal ground

PIN 1

PIN 8

PIN

Function

Description

1

Drain voltage, first stage

2

RF input and drain

voltage for first stage

3

GND

Ground

4

Gate bias voltage,

second stage

5

Gate bias voltage,

third stage

6

GND

Ground

7

RF output and drain

voltage for third stage

8

Drain voltage for

second stage

PIN Configuration

Rating

Symbol

Value

Unit

DC Supply Voltage

5.5

V

RF Input Power

10

mW

Junction Temperature

150

°C

Storage Temperature

-40 to +150

°C

Operating Temperature

-40 to +100

°C

Moisture Sensitivity

JEDEC Level 1

Ordering Information

Part Number

Description

MA02303GJ-R7

7 inch, 1000 piece reel

MA02303GJ-R13

13 inch, 3000 piece reel

MA02303GJ-SMB

Sample test board