V 2.00

Control Inputs

Condition of BondPad

Condition of Switch

A

B

T

G1

G2

RF1

RF2

Absorbtive

V

V

GND

GND

—

On

Off

SPDT

V

V

GND

GND

—

Off

On

Reflective

V

V

—

GND

GND

On

Off

Handling Precautions

Permanent damage to the MASW4030G may occur if the fol-

lowing precautions are not adhered to:

A. Cleanliness — The MASW4030G should be handled in a

clean environment. DO NOT attempt to clean unit after

the MASW4030G is installed.

B. Static Sensitivity — All chip handling equipment and per-

sonnel should be DC grounded.

C. Transient — Avoid instrument and power supply tran-

sients while bias is applied to the MASW4030G. Use

shielded signal and bias cables to minimize inductive

pick-up.

D. Bias — Apply voltage to either of the complementary

control ports only when the other is grounded. No port

should be allowed to “float”.

E. General Handling — It is recommended that the

MASW4030G chip be handled along the long side of the

die with a sharp pair of bent tweezers. DO NOT touch

the surface of the chip with fingers or tweezers.

Mounting

The MASW4030G is back-metallized with

Pd/Ni/Au(100/1,000/10,000Å) metallization. It can be die-

mounted with AuSn eutectic preforms or with thermally con-

ductive epoxy. The package surface should be clean and flat

before attachment.

Eutectic Die Attach:

A. A 80/20 gold/tin preform is recommended with a work

surface temperature of approximately 255°C and a tool

temperature of 265°C. When hot 90/10 nitrogen/hydrogen

gas is applied, tool tip temperature should be approxi-

mately 290°C.

B. DO NOT expose the MASW4030G to a temperature

greater than 320°C for more than 20 seconds. No

more than 3 seconds of scrubbing should be required

for attachment.

Epoxy Die Attach:

A. Apply a minimum amount of epoxy and place the

MASW4030G into position. A thin epoxy fillet should be

visible around the perimeter of the chip.

B. Cure epoxy per manufacturer’s recommended schedule.

C. Electrically conductive epoxy may be used but is not

required.

Handling, Mounting and Bonding Procedure

MASW4030G

Maximum Ratings

A. Control Value (A or B):

–8.5 Vdc

B. Max Input RF Power:

+34 dBm

(500 MHz– 4 GHz)

C. Storage Temperature:

–65°C to +175°C

D. Max Operating Temperature:

+175°C

BondPad Dimensions — Inches (mm)

RF1, RF2

0.005 x 0.008 (0.125 x 0.200)

RFA1, RFB1

0.008 x 0.004 (0.200 x 0.100)

RFA2, RFB2

0.004 x 0.004 (0.100 x 0.100)

A, B, Ac, Bc

0.008 x 0.004 (0.200 x 0.100)

Wire Bonding

A. Ball or wedge with 1.0 mil diameter pure gold wire.

Thermosonic wirebonding with a nominal stage tempera-

ture of 150°C and a ball bonding force of 40 to 50 grams

or wedge bonding force of 18 to 22 grams is recommend-

ed. Ultrasonic energy and time should be adjusted to the

minimum levels achieve reliable wirebonds.

B. Wirebonds should be started on the chip and terminated

on the package. GND bonds should be as short as possi-

ble; at least three and no more than four bond wires from

ground pads to package are recommended.

Schematic

Truth Table