V 2.00

Maximum Ratings

A. Control Voltage (A / B): -8.5 Vdc

B. Max Input RF Power: +42 dBm (500 MHz - 6 GHz)

C. Storage Temperature: -65°C to +175°C

D. Maximum Operating Temperature: +175°C

Handling, Mounting, Bonding Procedure

MASW6010G

Handling Precautions

Permanent damage to the MASW6010 may occur if the following

precautions are not adhered to:

A. Cleanliness – The MASW6010 should be handled in a clean

environment. DO NOT attempt to clean unit after the

MASW6010 is installed.

B. Static Sensitivity – All chip handling equipment and personnel

should be DC grounded.

C. Transient – Avoid instrument and power supply transients while

bias is applied to the MASW6010.Use shielded signal and bias

cables to minimize inductive pick-up.

D. Bias – Apply voltage to either control port A/B or only when the

other is grounded. Neither port should be allowed to “float”.

E. General Handling – It is recommended that the MASW6010

chip be handled along the long side of the die with a sharp pair

of bent tweezers. DO NOT touch the surface of the chip with fin-

gers or tweezers.

Mounting

The MASW6010 is back-metallized with Pd/Ni/Au (100/1,000/ 30,000Å)

metallization.It can be die-mounted with AuSn eutectic preforms or

with thermally conductive epoxy. The package surface should be

clean and flat before attachment.

Eutectic Die Attach:

A. A 80/20 gold/tin preform is recommended with a work surface

temperature of approximately 255°C and a tool temperature of

265°C. When hot 90/10 nitrogen/hydrogen gas is applied, tool

tip temperature should be approximately 290°C.

B. DO NOT expose the MASW6010 to a temperature greater than

320°C for more than 20 seconds. No more than 3 seconds of

scrubbing should be required for attachment.

Epoxy Die Attach:

A. Electrically conductive epoxy must be used.

B. Apply a minimum amount of epoxy and place the MASW6010

into position. A thin epoxy fillet should be visible around the

perimeter of the chip.

C. Cure epoxy per manufacturer's recommended schedule.

Wire Bonding

A. Ball or wedge bond with 1.0 mil diameter pure gold wire. Thermo-

sonic wirebonding with a nominal stage temperature of 150°C

and a ball bonding force of 40 to 50 grams or wedge bonding

force of 18 to 22 grams is recommended. Ultrasonic energy and

time should be adjusted to the minimum levels to achieve reliable

wirebonds.

B. Wirebonds should be started on the chip and terminated on the

package.

Bonding Pad Dimensions

Inches (mm)

RFcom: 0.004 x 0.004

(0.100 x 0.100)

RF2,RF3: 0.004 x 0.004

(0.100 x 0.100)

A,B: 0.004 x 0.004

(0.100 x 0.100)

GND1,GND2: 0.012 x 0.004

(0.300 x 0.100)

Die Size

Inches (mm)

0.031 x 0.031 x 0.010

(0.80 x 0.80 x 0.25)

Truth Table

Control Input

Condition Of Switch

RFCommon To

Each RF Port

A

B

RF1

RF2

VinHi

VinLow

On

Off

VinLow

VinHi

Off

On

Vin Low 0 to -0.2V

VinHi

-5V to -8V