SPDT High Isolation Terminated

Switch, 0.5 - 3.0 GHz

Functional Block Diagram

V 1.00

Features

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Positive Voltage Control (0 / +5 V)

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High Isolation (53 dB typ. @ 0.9 GHz,

50 dB typ @ 1.9 GHz)

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50-Ohm Internal Terminations

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Low Insertion Loss (0.6 dB typ. @ 0.9 GHz,

0.7 dB typ. @ 1.9 GHz)

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MSOP-8-EP Package

Description

The M/A-COM MASWSS0024 GaAs monolithic switch

provides high isolation in a low-cost, plastic surface

mount package.

The MASWSS0024 is ideal for

applications across a broad range of frequencies

including synthesizer switching, transmit / receive

switching, switch matrices and filter banks in systems

such as radio and cellular equipment, PCS, GPS, and

fiber optic modules.

M/A-COM fabricates the MASWSS0024 using an 0.5-

micron gate length MESFET process.

The process

features full chip passivation for performance and

reliability.

Handling Procedures

The following precautions should be observed to avoid

damage:

Static Sensitivity

Gallium arsenide integrated circuits are ESD sensitive

and can be damaged by static electricity.

Use proper

ESD precautions when handling these devices.

Pin Configuration

Pin

Function

Pin

Function

1

V1

5

RF2

2

V2

6

GND

3

RFC

7

GND

4

GND

8

RF1

Truth Table

V1

V2

RFC-RF1

RFC-RF2

0

1

Off

On

1

0

On

Off

2. External DC blocking capacitors required on all RF ports.

We recommend 47 pF.

Logic Level

Voltage Level

0 ± 0.2V

RFC

RF1

RF2

Absolute Maximum Ratings

1

1. Operation of this device above any one of these

parameters may cause permanent damage.

Parameter

Absolute Maximum

Max Input Power

(0.5 - 3.0 GHz)

3V Control

5V Control

+30 dBm

+33 dBm

Operating Voltage

+8.5 Volts

Operating Temperature

-40°C to +85°C

Storage Temperature

-65°C to +150°C

3. 3.0V < VC < 8.0V