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IRF2805SPBF 数据表(PDF) 2 Page - International Rectifier |
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IRF2805SPBF 数据表(HTML) 2 Page - International Rectifier |
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2 / 11 page  IRF2805S/LPbF 2 www.irf.com Parameter Min. Typ. Max. Units Conditions V(BR)DSS Drain-to-Source Breakdown Voltage 55 ––– ––– V VGS = 0V, ID = 250µA ∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient ––– 0.06 ––– V/°C Reference to 25°C, ID = 1mA RDS(on) Static Drain-to-Source On-Resistance ––– 3.9 4.7 m Ω VGS = 10V, ID = 104A VGS(th) Gate Threshold Voltage 2.0 ––– 4.0 V VDS = 10V, ID = 250µA gfs Forward Transconductance 91 ––– ––– S VDS = 25V, ID = 104A ––– ––– 20 µA VDS = 55V, VGS = 0V ––– ––– 250 VDS = 44V, VGS = 0V, TJ = 150°C Gate-to-Source Forward Leakage ––– ––– 200 VGS = 20V Gate-to-Source Reverse Leakage ––– ––– -200 nA VGS = -20V Qg Total Gate Charge ––– 150 230 ID = 104A Qgs Gate-to-Source Charge ––– 38 57 nC VDS = 44V Qgd Gate-to-Drain ("Miller") Charge ––– 52 78 VGS = 10V td(on) Turn-On Delay Time ––– 14 ––– VDD = 28V tr Rise Time ––– 120 ––– ID = 104A td(off) Turn-Off Delay Time ––– 68 ––– RG = 2.5 Ω tf Fall Time ––– 110 ––– VGS = 10V Between lead, ––– ––– 6mm (0.25in.) from package and center of die contact Ciss Input Capacitance ––– 5110 ––– VGS = 0V Coss Output Capacitance ––– 1190 ––– pF VDS = 25V Crss Reverse Transfer Capacitance ––– 210 ––– ƒ = 1.0MHz, See Fig. 5 Coss Output Capacitance ––– 6470 ––– VGS = 0V, VDS = 1.0V, ƒ = 1.0MHz Coss Output Capacitance ––– 860 ––– VGS = 0V, VDS = 44V, ƒ = 1.0MHz Coss eff. Effective Output Capacitance ––– 1600 ––– VGS = 0V, VDS = 0V to 44V nH Electrical Characteristics @ TJ = 25°C (unless otherwise specified) LD Internal Drain Inductance LS Internal Source Inductance ––– ––– S D G IGSS ns 4.5 7.5 IDSS Drain-to-Source Leakage Current Repetitive rating; pulse width limited by max. junction temperature. (See fig. 11). Starting TJ = 25°C, L = 0.08mH RG = 25 Ω, IAS = 104A. (See Figure 12). ISD ≤ 104A, di/dt ≤ 240A/µs, VDD ≤ V(BR)DSS, TJ ≤ 175°C Pulse width ≤ 400µs; duty cycle ≤ 2%. Notes: S D G Parameter Min. Typ. Max. Units Conditions IS Continuous Source Current MOSFET symbol (Body Diode) ––– ––– showing the ISM Pulsed Source Current integral reverse (Body Diode) ––– ––– p-n junction diode. VSD Diode Forward Voltage ––– ––– 1.3 V TJ = 25°C, IS = 104A, VGS = 0V trr Reverse Recovery Time ––– 80 120 ns TJ = 25°C, IF = 104A Qrr Reverse Recovery Charge ––– 290 430 nC di/dt = 100A/µs ton Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) Source-Drain Ratings and Characteristics 175 700 A
Coss eff. is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS . Calculated continuous current based on maximum allowable junction temperature. Package limitation current is 75A. Limited by TJmax , see Fig.12a, 12b, 15, 16 for typical repetitive avalanche performance. This value determined from sample failure population. 100% tested to this value in production. |
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