PRELIMINARY

RF3833

2 of 10

RF Micro Devices Inc.

7628 Thorndike Road, Greensboro, NC 27409-9421

DS140121

For sales or technical support, contact RFMD at +1.336.678.5570 or customerservice@rfmd.com.

The information in this publication is believed to be accurate. However, no responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any infringement of patents or other rights of

third parties resulting from its use. No license is granted by implication or otherwise under any patent or patent rights of RFMD. RFMD reserves the right to change component circuitry, recommended

application circuitry and specifications at any time without prior notice.

Absolute Maximum Ratings

Parameter

Rating

Unit

150

V

-8 to +2

V

Operational Voltage

50

V

RF - Input Power

36

dBm

Ruggedness (VSWR)

10:1

Storage Temperature Range

-55 to +125

°C

-40 to +85

°C

200

°C

Human Body Model

Class 1A

3E + 06

Hours

5.2

°C/W

Caution! ESD sensitive device.

RoHS (Restriction of Hazardous

Substances): Compliant per EU Directive

2011/65/EU.

Exceeding any one or a combination of the Absolute

Maximum Rating conditions may cause permanent

damage to the device. Extended application of Absolute

Maximum Rating conditions to the device may reduce

device reliability. Specified typical performance or

functional operation of the device under Absolute

Maximum Rating conditions is not implied.

Nominal Operating Parameters

Parameter

Specification

Unit

Condition

Min

Typ

Max

Recommended Operating

Conditions

48

V

-2.5

V

Drain Bias Current

88

mA

35

dBm

Input Source VSWR

10:1

Maximum Gate Current (Ig)

15.25

mA

P3dB, CW

RF Performance Characteristics

Frequency Range

30

2000

MHz

Small signal 3dB bandwidth

Linear Gain

14.8

dB

Power Gain

11.6

dB

Gain Variation with Temperature

-0.02

dB/ºC

Input Return Loss (S11)

-10

dB

Output Power (P3dB)

44

dBm

30MHz to 2000MHz

Power Added Efficiency (PAE)

45

%

30MHz to 2000MHz

* MTTF

– median time to failure for wear-out failure mode (30% Idss degradation) which is determined by the technology process reliability. Refer to

product qualification report for FIT (random) failure rate.

Operation of this device beyond any one of these limits may cause permanent damage. For reliable continuous operation, the device voltage and

current must not exceed the maximum operating values specified in the table on page two.