Features

1 of 9

Optimum Technology

Matching® Applied

GaAs HBT

InGaP HBT

GaAs MESFET

SiGe BiCMOS

Si BiCMOS

SiGe HBT

GaAs pHEMT

Si CMOS

Si BJT

GaN HEMT

RF MICRO DEVICES®, RFMD®, Optimum Technology Matching®, Enabling Wireless Connectivity™, PowerStar®, POLARIS™ TOTAL RADIO™ and UltimateBlue™ are trademarks of RFMD, LLC. BLUETOOTH is a trade-

mark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and registered trademarks are the property of their respective owners. ©2006, RF Micro Devices, Inc.

Product Description

7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical

support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.

InP HBT

LDMOS

RF MEMS

RFFC0085

OUT-OF-BAND TUNER

The RFFC0085 is a downconverter designed to be used as an Out-of-Band

Tuner for use in CATV set-top box and Digital Cable Ready TV applications.

The RFFC0085 consists of an input AGC amplifier, mixer, and a video/AGC

amplifier. This device offers optimum performance with low power con-

sumption and low distortion. This product is RoHS compliant.

VDD

MXOUT -

2

RF IN -

1

3

RF IN +

4

5

6

7

8

16

15

14

13

VAGC

IF OUT +

IFOUT -

VDD

9

12

10

11

3.3V Single Supply Operation

Low Power Consumption

(345mW)

Low Distortion: -53dBc at

77dB Total Conversion Gain

55dB Total Gain Control

Range

Low LO-RF Leakage

Applications

Cable Set-Top Boxes

Digital Cable Ready Televi-

sions

DS100219

Package: QFN, 16-Pin, 3mm x 3mm

RFFC0085Out-

Of-Band Tuner

Parameter

Specification

Unit

Condition

Min.

Typ.

Max.

RF Input Frequency Range

50

150

MHz

High Side LO

LO Input Frequency Range

80

220

MHz

High Side LO

Maximum Conversion Gain

77

dB

AGC Voltage

0

3

V

AGC Dynamic Range

50

55

dB

Third Order Intermodulation

53

60

dBc

IF Output Level

1

2

Differential Output, 1k

Ω load

Noise Figure

15

16.5

dB

LO Leakage at the RF Port

-87

dB

Supply Voltage

3.0

3.3

3.6

V

Supply Current

106

123

mA

104

123

mA