CS5124 datasheet(4/11 Pages) ONSEMI

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CS5124

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ELECTRICAL CHARACTERISTICS (continued) (−40°C ≤ TJ ≤ 125°C; −40°C ≤ TA ≤ 105°C, 7.60 V ≤ VCC ≤ 20 V, UVLO = 3.0 V,

ISENSE = 0 V, CV(CC) = 0.33 mF, CGATE = 1.0 nF (ESR = 10 W); CSS = 470 pF; CV(FB) = 100 pF, unless otherwise specified.)

Characteristic

Unit

Max

Typ

Min

Test Conditions

Soft−Start

Soft−Start Charge Current

−

7.0

Soft−Start Discharge Current

−

0.5

10.0

−

VSS Voltage when VFB Begins to

Rise

VFB = 300 mV

1.40

1.62

1.80

Peak Soft−Start Charge Voltage

−

4.7

4.9

−

Valley Soft−Start Discharge Voltage

−

200

275

400

Current Sense

First Current Sense Threshold

At max duty cycle

170

195

215

Second Current Sense Threshold

−

250

275

315

ISENSE to GATE Prop. Delay

0 to 700 mV pulse into ISENSE (after blanking time)

130

Leading Edge Blanking Time

0 to 400 mV pulse into ISENSE

130

180

Internal Offset

Note 3

−

Voltage Feedback

VFB Pull−up Res.

−

2.9

4.3

8.1

VFB Clamp Voltage

2.63

2.90

3.15

VFB Fault Voltage Threshold

−

460

490

520

Output Gate Drive

Maximum Sleep Pull−down Voltage

VCC = 6.0 V, IOUT = 1.0 mA

−

1.2

2.0

GATE High (AC)

Series resistance < 1.0 W, (Note 3)

VCC − 1.0 VCC − 0.5

−

GATE Low (AC)

Series resistance < 1.0 W, (Note 3)

−

0.0

0.5

GATE High Clamp Voltage

VCC = 20 V

11.0

13.5

16.0

Rise Time

Measure GATE rise time,

1.0 V < GATE < 9.0 V VCC = 12 V

−

Fall TIme

Measure GATE fall time,

9.0 V > GATE > 1.0 V VCC = 12 V

−

Thermal Shutdown

Thermal Shutdown Temperature

(Note 3) GATE low

135

150

165

°C

Thermal Enable Temperature

(Note 3) GATE switching

100

125

150

°C

Thermal Hysteresis

(Note 3)

°C

3. Not tested in production. Specification is guaranteed by design.

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