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IRF6723M2DPBF 数据表(PDF) 1 Page - International Rectifier |
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IRF6723M2DPBF 数据表(HTML) 1 Page - International Rectifier |
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1 / 10 page  www.irf.com 1 12/16/09 IRF6723M2DTRPbF IRF6723M2DTR1PbF DirectFET Power MOSFET Applicable DirectFET Outline and Substrate Outline Typical values (unless otherwise specified) DirectFET ISOMETRIC Description The IRF6723M2DPbF combines two MOSFET switches optimized for high side applications into a single medium can DirectFET package. The switches have low gate resistance and low charge along with ultra low package inductance providing significant reduction in switching losses. The reduced losses make this product ideal for high efficiency multiphase DC-DC converters that power the latest generation of processors operating at higher frequencies. The IRF6723M2DPbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the highest power density for two MOSFETs in a package that has the footprint of a SO-8 and only 0.7 mm profile. The DirectFET package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package allows dual sided cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by 80%. Fig 1. Typical On-Resistance vs. Gate Voltage Fig 2. Typical Total Gate Charge vs Gate-to-Source Voltage Click on this section to link to the appropriate technical paper. Click on this section to link to the DirectFET Website. Surface mounted on 1 in. square Cu board, steady state. TC measured with thermocouple mounted to top (Drain) of part.
Repetitive rating; pulse width limited by max. junction temperature. Starting TJ = 25°C, L = 0.99mH, RG = 25Ω, IAS = 12A. Notes: PD - 97441 G1 G2 S1 S2 S1 S2 SB M2 M4 MA L4 L6 L8 2 4 6 8 10 12 14 16 18 20 VGS, Gate -to -Source Voltage (V) 0 5 10 15 20 25 ID = 15A TJ = 25°C TJ = 125°C Applications l Dual Common Drain Control MOSFETs for Multiphase DC-DC Converters Features l Replaces Two Discrete MOSFETs l Optimized for High Frequency Switching l Low Profile (<0.7 mm) l Dual Sided Cooling Compatible l Ultra Low Package Inductance l Compatible with existing Surface Mount Techniques l RoHS Compliant and Halogen Free l 100% Rg tested Absolute Maximum Ratings (each die operating consecutively) Parameter Units VDS Drain-to-Source Voltage V VGS Gate-to-Source Voltage ID @ TA = 25°C Continuous Drain Current, VGS @ 10V e ID @ TA = 70°C Continuous Drain Current, VGS @ 10V e A ID @ TC = 25°C Continuous Drain Current, VGS @ 10V f IDM Pulsed Drain Current g EAS Single Pulse Avalanche Energy h mJ IAR Avalanche Current Ãg A 71 Max. 13 47 130 ±20 30 15 12 Qg tot Qgd Qgs2 Qrr Qoss Vgs(th) 9.4nC 3.3nC 1.2nC 17nC 6.3nC 1.8V VDSS VGS RDS(on) RDS(on) 30V max ±20V max 5.2mΩ@ 10V 8.6mΩ@ 4.5V 0 5 10 15 20 25 QG Total Gate Charge (nC) 0.0 2.0 4.0 6.0 8.0 10.0 12.0 14.0 VDS= 24V VDS= 15V ID= 12A |
类似零件编号 - IRF6723M2DPBF_15 |
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类似说明 - IRF6723M2DPBF_15 |
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