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SGC2363Z 数据表(PDF) 2 Page - RF Micro Devices

部件名 SGC2363Z
功能描述  50MHz to 4000MHz ACTIVE BIAS SILICON GERMANIUM CASCADABLE GAIN BLOCK
PDF  6 Pages
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制造商  RFMD [RF Micro Devices]
网页  http://www.rfmd.com
标志 RFMD - RF Micro Devices

SGC2363Z 数据表(HTML) 2 Page - RF Micro Devices

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DS111011
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.
SGC2363Z
Typical RF Performance with Application Circuit at Key Operating Frequencies
Typical Performance with Bias Tee, VD=3V, ID=26mA
Absolute Maximum Ratings
Parameter
Rating
Unit
Device Current (ICE)55
mA
Device Voltage (VCE)4
V
RF Input Power* (See Note)
12
dBm
Junction Temp (TJ)+150
°C
Operating Temp Range (TL)
-40 to +85
°C
Storage Temp
+150
°C
ESD Rating - Human Body Model
(HBM)
Class 1C
Moisture Sensitivity Level
MSL 1
*Note: Load condition ZL=50.
Operation of this device beyond any one of these limits may cause permanent dam-
age. For reliable continuous operation, the device voltage and current must not
exceed the maximum operating values specified in the table on page one.
Bias Conditions should also satisfy the following expression:
IDVD<(TJ-TL)/RTH, j-l and TL=TLEAD
Parameter
Unit
100
MHz
500
MHz
850
MHz
1950
MHz
2400
MHz
3500
MHz
Small Signal Gain (G)
dB
18.4
18.1
17.0
13.1
12.3
9.8
Output Third Order Intercept Point (OIP3)
dBm
23.0
23.5
23.0
23.0
24.0
22.0
Output Power at 1dB Compression (P1dB)
dBm
12.1
11.0
10.4
10.1
9.6
8.3
Input Return Loss (IRL)
dB
23.5
19.0
18.0
15.0
16.5
14.0
Output Return Loss (ORL)
dB
22.5
18.5
16.5
14.5
13.0
12.5
Reverse Isolation (S12)
dB
20.5
21.5
22.0
20.5
20.0
19.0
Noise Figure (NF)
dB
2.9
3.0
3.3
3.7
3.9
4.7
Test Conditions: VD=3V ID=26mA Typ. OIP3 Tone Spacing=1MHz, POUT per tone=-5dBm
TL=25°C ZS=ZL=50
Caution! ESD sensitive device.
Exceeding any one or a combination of the Absolute Maximum Rating conditions may
cause permanent damage to the device. Extended application of Absolute Maximum
Rating conditions to the device may reduce device reliability. Specified typical perfor-
mance or functional operation of the device under Absolute Maximum Rating condi-
tions is not implied.
The information in this publication is believed to be accurate and reliable. However, no
responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any
infringement of patents, or other rights of third parties, resulting from its use. No
license is granted by implication or otherwise under any patent or patent rights of
RFMD. RFMD reserves the right to change component circuitry, recommended appli-
cation circuitry and specifications at any time without prior notice.
RFMD Green: RoHS compliant per EU Directive 2002/95/EC, halogen free
per IEC 61249-2-21, < 1000ppm each of antimony trioxide in polymeric
materials and red phosphorus as a flame retardant, and <2% antimony in
solder.
OIP3 vs. Frequency (-5dBm/tone, 1MHz spacing)
18
20
22
24
26
28
00.5
11.5
22.5
3
3.5
Frequency (GHz)
25C
-40C
85C
P1dB vs. Frequency
5
7
9
11
13
15
00.5
11.522.5
33.5
Frequency (GHz)
25C
-40C
85C



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