Features

1 of 6

Optimum Technology

Matching® Applied

GaAs HBT

InGaP HBT

GaAs MESFET

SiGe BiCMOS

Si BiCMOS

SiGe HBT

GaAs pHEMT

Si CMOS

Si BJT

GaN HEMT

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Product Description

7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical

support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.

RF MEMS

SGC4463Z

50MHz to 4000MHz ACTIVE BIAS SILICON

GERMANIUM CASCADABLE GAIN BLOCK

RFMD’s SGC4463Z is a high performance SiGe HBT MMIC amplifier utiliz-

ing a Darlington configuration with a patented active bias network. The

active bias network provides stable current over temperature and process

Beta variations. Designed to run directly from a 3V supply, the SGC4463Z

does not require a dropping resistor as compared to typical Darlington

amplifiers. The SGC4463Z is designed for high linearity 3V gain block

applications that require small size and minimal external components. It is

internally matched to 50

.

Gain & Return Loss

-30

-20

-10

0

10

20

30

0

0.5

1

1.5

2

2.5

3

3.5

4

Frequency (GHz)

S11

S21

S22

Bias Tee Data, ZS = ZL = 50 Ohms, TL = 25C



Single Fixed 3V Supply



No Dropping Resistor

Required



Patented Self-Bias Circuitry







Robust 1000V ESD, Class 1C

HBM

Applications



PA Driver Amplifier



Cellular, PCS, GSM, UMTS,

WCDMA



IF Amplifier



Wireless Data, Satellite

DS140210



Package: SOT-363

SGC4463Z

Parameter

Specification

Unit

Condition

Min.

Typ.

Max.

Small Signal Gain

19.0

20.5

22.0

dB

850MHz

12.9

14.4

15.9

dB

1950MHz

13.3

dB

2400MHz

Output Power at 1dB Compression

13.8

dBm

850MHz

11.9

12.9

dBm

1950MHz

12.5

dBm

2400MHz

Output Third Order Intercept Point

28.0

dBm

850MHz

25.0

27.0

dBm

1950MHz

26.0

dBm

2400MHz

Input Return Loss

10.0

13.0

dB

1950MHz

Output Return Loss

7.0

11.0

dB

1950MHz

Noise Figure

3.7

4.7

dB

1930MHz

Thermal Resistance

180

°C/W

junction - lead

Device Operating Voltage

3.0

V

Device Operating Current

46.0

52.0

60.0

mA