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SGC4486Z 数据表(PDF) 2 Page - RF Micro Devices |
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SGC4486Z 数据表(HTML) 2 Page - RF Micro Devices |
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2 / 6 page ![]() 2 of 6 DS100813 7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com. SGC4486Z Typical RF Performance with Application Circuit at Key Operating Frequencies (Bias Tee) Typical Performance with Bias Tee, VD=3V, ID=52mA Absolute Maximum Ratings Parameter Rating Unit Device Current (ICE)110 mA Device Voltage (VCE)4 V RF Input Power* (See Note) 12 dBm Junction Temp (TJ)+150 °C Operating Temp Range (TL) -40 to +85 °C Storage Temp +150 °C ESD Rating - Human Body Model (HBM) Class 1C Moisture Sensitivity Level MSL 1 *Note: Load condition ZL=50Ω Operation of this device beyond any one of these limits may cause permanent dam- age. For reliable continuous operation, the device voltage and current must not exceed the maximum operating values specified in the table on page one. Bias Conditions should also satisfy the following expression: IDVD<(TJ-TL)/RTH, j-l and TL=TLEAD Parameter Unit 100 MHz 500 MHz 850 MHz 1950 MHz 2400 MHz 3500 MHz Small Signal Gain (G) dB 23.5 22.5 20.5 14.5 12.3 9.5 Output Third Order Intercept Point (OIP3) dBm 30.5 29.5 29.0 27.5 26.5 23.5 Output Power at 1dB Compression (P1dB) dBm 16.1 14.4 13.8 12.7 12.4 10.6 Input Return Loss (IRL) dB 24.0 15.5 16.5 14.5 14.5 13.0 Output Return Loss (ORL) dB 25.0 17.0 16.5 11.5 12.0 11.0 Reverse Isolation (S12) dB 25.0 26.0 25.0 20.5 19.0 17.5 Noise Figure (NF) dB 2.8 2.8 3.1 3.4 3.9 4.8 Test Conditions: VD=3V ID=52mA Typ. OIP3 Tone Spacing=1MHz, POUT per tone=-5dBm TL=25°C ZS=ZL=50Ω Caution! ESD sensitive device. Exceeding any one or a combination of the Absolute Maximum Rating conditions may cause permanent damage to the device. Extended application of Absolute Maximum Rating conditions to the device may reduce device reliability. Specified typical perfor- mance or functional operation of the device under Absolute Maximum Rating condi- tions is not implied. RoHS status based on EUDirective2002/95/EC (at time of this document revision). The information in this publication is believed to be accurate and reliable. However, no responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any infringement of patents, or other rights of third parties, resulting from its use. No license is granted by implication or otherwise under any patent or patent rights of RFMD. RFMD reserves the right to change component circuitry, recommended appli- cation circuitry and specifications at any time without prior notice. OIP3 vs. Frequency (-5dBm/tone, 1MHz spacing) 20 22 24 26 28 30 32 34 36 00.5 11.5 22.5 3 3.5 Frequency (GHz) 25C -40C 85C P1dB vs. Frequency 9 11 13 15 17 19 21 00.5 11.522.5 33.5 Frequency (GHz) 25C -40C 85C |
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