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SGC4563Z 数据表(PDF) 1 Page - RF Micro Devices |
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SGC4563Z 数据表(HTML) 1 Page - RF Micro Devices |
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1 / 10 page ![]() Features 1 of 10 Optimum Technology Matching® Applied GaAs HBT InGaP HBT GaAs MESFET SiGe BiCMOS Si BiCMOS SiGe HBT GaAs pHEMT Si CMOS Si BJT GaN HEMT RF MICRO DEVICES®, RFMD®, Optimum Technology Matching®, Enabling Wireless Connectivity™, PowerStar®, POLARIS™ TOTAL RADIO™ and UltimateBlue™ are trademarks of RFMD, LLC. BLUETOOTH is a trade- mark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and registered trademarks are the property of their respective owners. ©2006, RF Micro Devices, Inc. Product Description 7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com. RF MEMS SGC4563Z 50MHz to 4000MHz ACTIVE BIAS SILICON GERMANIUM CASCADABLE GAIN BLOCK RFMD’s SGC4563Z is a high performance SiGe HBT MMIC amplifier utiliz- ing a Darlington configuration with a patented active bias network. The active bias network provides stable current over temperature and process Beta variations. Designed to run directly from a 3V supply, the SGC4563Z does not require a dropping resistor as compared to typical Darlington amplifiers. The SGC4563Z is designed for high linearity 3V gain block applications that require small size and minimal external components. It is internally matched to 50 . Gain and RL versus Frequency -40 -30 -20 -10 0 10 20 30 0.00.5 1.01.5 2.02.5 3.03.5 Frequency (GHz) Gain IRL ORL S11 S21 S22 Bias Tee Data, ZS = ZL = 50 Ohms, TL = 25C Single Fixed 3V Supply No Dropping Resistor Required Patented Self-Bias Circuitry P1dB=15.6dBm at 1950MHz OIP3=28.5dBm at 1950MHz Robust 1000V ESD, Class 1C HBM Applications PA Driver Amplifier Cellular, PCS, GSM, UMTS, WCDMA IF Amplifier Wireless Data, Satellite DS140527 Package: SOT-363 SGC4563Z Parameter Specification Unit Condition Min. Typ. Max. Small Signal Gain 26.5 dB Freq=500MHz 22.5 25.5 28.5 dB Freq=*850MHz 18.5 20.5 22.5 dB Freq=1950MHz Output Power at 1dB Compression 16.8 dBm Freq=500MHz 16.5 dBm Freq=850MHz 14.0 15.6 dBm Freq=1950MHz Output Third Order Intercept Point 29.5 dBm Freq=500MHz 29.5 dBm Freq=850MHz 26.0 28.5 dBm Freq=1950MHz Input Return Loss 14.0 18.0 dB Freq=1950MHz Output Return Loss 10.0 14.0 dB Freq=1950MHz Noise Figure 1.7 3.0 dB Freq=1930MHz Device Operating Voltage 3 V Device Operating Current 37 48 59 mA Thermal Resistance 120 °C/W (RTH, j-l) Junction to lead Test Conditions: VD=3.0V, ID=48mA, TL=25°C, OIP3 Tone Spacing=1MHz. *Bias Tee Data, ZS=ZL=50POUT per tone=0dBm, Application Circuit Data Unless Otherwise Noted |
类似零件编号 - SGC4563Z |
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类似说明 - SGC4563Z |
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