Features

1 of 6

Optimum Technology

Matching® Applied

GaAs HBT

InGaP HBT

GaAs MESFET

SiGe BiCMOS

Si BiCMOS

SiGe HBT

GaAs pHEMT

Si CMOS

Si BJT

GaN HEMT

RF MICRO DEVICES®, RFMD®, Optimum Technology Matching®, Enabling Wireless Connectivity™, PowerStar®, POLARIS™ TOTAL RADIO™ and UltimateBlue™ are trademarks of RFMD, LLC. BLUETOOTH is a trade-

mark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and registered trademarks are the property of their respective owners. ©2006, RF Micro Devices, Inc.

Product Description

7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical

support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.

RF MEMS

SGL0622Z

5MHz to 4000MHz LOW NOISE MMIC

AMPLIFIER SILICON GERMANIUM

The SGL0622Z is a low noise, high gain MMIC LNA designed for low power

single-supply operation from 2.7V to 3.6V. Its Class-1C ESD protection

and high input overdrive capability ensures rugged performance, while its

integrated active bias circuit maintains robust stable bias over tempera-

ture and process beta variation. The SGL0622Z is internally matched from

5MHz to 4000 MHz and requires only 4 to 5 external biasing components

(DC blocks, bypass caps, inductive choke). The SGL0622Z is fabricated

using highly repeatable Silicon Germanium technology and is housed in a

cost-effective RoHS/WEEE compliant QFN 2x2 minia-

ture package.

Typical Performance

0.0

5.0

10.0

15.0

20.0

25.0

30.0

35.0

40.0

100.0

600.0

1100.0

1600.0

2100.0

2600.0

3100.0

Frequency (MHz)

0.00

0.50

1.00

1.50

2.00

2.50

3.00

3.50

4.00

NF

Gain



High Gain=28dB at 1575MHz



Low Noise Figure=1.5dB at

1575MHz



Low Power Consumption,

10.5mA @ 3.3V



Battery Operation:2.7V to 3.6V

(Active Biased)



Fully Integrated Matching



Class-1C ESD Protection

(>1000V HBM)



High input overdrive capability,

+18dBm

Applications



High Gain GPS Receivers



DS140404



Package: QFN, 2x2

SGL0622Z

Parameter

Specification

Unit

Condition

Min.

Typ.

Max.

Small Signal Gain

25.0

28.0

31.0

dB

1.575GHz

23.0

dB

2.44GHz

14.5

16.5

18.5

dB

3.50GHz

Output Power at 1dB Compression

3.3

5.3

dBm

1.575GHz

1.5

dBm

2.44GHz

-1.4

dBm

3.50GHz

Input Third Order Intercept Point

-16.0

-13.0

dBm

1.575GHz

-12.0

dBm

2.44GHz

-8.5

dBm

3.50GHz

Input Return Loss

12.0

14.0

dB

1.575GHz

12.0

dB

2.44GHz

10.0

dB

3.50GHz

Output Return Loss

6.0

9.5

dB

1.575GHz

14.0

dB

2.44GHz

22.0

dB

3.50GHz

Noise Figure

1.5

1.9

dB

1.575GHz

2.0

dB

2.44GHz

2.8

dB

3.50GHz

Reverse Isolation

-28.0

dB

0.05GHz to 4.0GHz

Thermal Resistance

150

°C/W

junction - lead

Device Operating Current

7.5

10.5

14.5

mA