Features

1 of 7

Optimum Technology

Matching® Applied

GaAs HBT

InGaP HBT

GaAs MESFET

SiGe BiCMOS

Si BiCMOS

SiGe HBT

GaAs pHEMT

Si CMOS

Si BJT

GaN HEMT

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Product Description

7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical

support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.

RF MEMS

SPA2118Z

850MHz 1 WATT POWER AMPLIFIER WITH

ACTIVE BIAS

RFMD’s SPA2118Z is a high efficiency GaAs Heterojunction Bipolar Tran-

sistor (HBT) amplifier housed in a low-cost surface-mountable plastic

package. These HBT amplifiers are fabricated using molecular beam epi-

taxial growth technology which produces reliable and consistent perfor-

mance from wafer to wafer and lot to lot. This product is specifically

designed for use as a driver amplifier for infrastructure equipment in the

850MHz band. Its high linearity makes it an ideal choice for multi-carrier

and digital applications.

(+1) 336-678-5570

sales-support@rfmd.com

VC1

VBIAS

RFIN

VPC2

RFOUT/

VC2

Active

Bias



High Linearity Performance



+20.7dBm, IS-95 CDMA

Channel Power at -55dBc

ACP



+47dBm Typ. OIP3



High Gain: 33dB Typ.



On-Chip Active Bias Control



Patented high Reliability GaAs

HBT Technology



Surface-Mountable Plastic

Package

Applications



IS-95 CDMA Systems



Multi-Carrier Applications



AMPS, ISM Applications

DS121024



Package: Exposed Pad SOIC-8

SPA2118Z

850MHz 1

Watt Power

Amplifier with

Active Bias

Parameter

Specification

Unit

Condition

Min.

Typ.

Max.

Frequency of Operation

810

900

960

MHz

Output Power at 1dB Compression

29.0

dBm

Adjacent Channel Power

-55.0

-52.0

dBc

IS-95 at 880MHz, ±885KHz offset,

Small Signal Gain

31.5

33.0

34.5

dB

880MHz

Input VSWR

1.5:1

Output Third Order Intercept Point

47.0

dBm

Power out per tone=+14dBm

Noise Figure

5.0

dB

Device Current

360

400

425

mA

Device Voltage

4.75

5.0

5.25

V

Thermal Resistance

(Junction - Lead)

31

°C/W