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ZXTP2012Z 数据表(PDF) 2 Page - Diodes Incorporated |
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ZXTP2012Z 数据表(HTML) 2 Page - Diodes Incorporated |
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2 / 7 page ![]() ZXTP2012Z Datasheet Number: DS33713 Rev. 3 - 2 2 of 7 www.diodes.com October 2012 © Diodes Incorporated ZXTP2012Z A Product Line of Diodes Incorporated Maximum Ratings (@TA = +25°C, unless otherwise specified.) Characteristic Symbol Value Unit Collector-Base Voltage VCBO -100 V Collector-Emitter Voltage VCEO -60 V Emitter-Base Voltage VEBO -7 V Continuous Collector Current IC -4.3 A Peak Pulse Current ICM -15 A Thermal Characteristics (@TA = +25°C, unless otherwise specified.) Characteristic Symbol Value Unit Power Dissipation (Note 6) Linear derating factor PD 1.5 12 W mW/°C Power Dissipation (Note 7) Linear derating factor PD 2.1 16.8 W mW/°C Thermal Resistance, Junction to Ambient (Note 6) RθJA 83 °C/W Thermal Resistance, Junction to Ambient (Note 7) RθJA 60 °C/W Thermal Resistance, Junction to Leads (Note 8) RθJL 3.23 °C/W Operating and Storage Temperature Range TJ,TSTG -55 to +150 °C Notes: 6. For a device surface mounted on 25mm x 25mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions; device measured when operating in steady state condition. 7. Same as note (6), except the device is mounted on 50mm X 50mm single sided 1oz weight copper. 8. Thermal resistance from junction to solder-point (on the exposed collector pad). |
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