3 Watt Cellular T/R and Antenna Changeover Switch, DC - 3.0 GHz

SW-425

M/A-COM Division of AMP Incorporated

3 North America: Tel. (800) 366-2266, Fax (800) 618-8883 3 Asia/Pacific: Tel.+85 2 2111 8088, Fax +85 2 2111 8087

3 Europe: Tel. +44 (1344) 869 595, Fax+44 (1344) 300 020

www.macom.com

AMP and Connecting at a Higher Level are trademarks.

Specifications subject to change without notice.

V2.00

Functional Diagram

Absolute Maximum Ratings

1

Parameter

Absolute Maximum

Max. Input Power (0.5 - 3.0 GHz)

3 V Control

5 V Control

+36 dBm

+38 dBm

Operating Temperature

-40°C to +85°C

Storage Temperature

-65°C to +150°C

1. Exceeding any one or combination of these limits may cause

permanent damage.

RF1

GND

RF2

VA

RFC

VB

PIN 1

Truth Table

Mode

(Control)

Control

A

Control

B

RFC - RF1

RFC - RF2

Positive

1

0±0.2V

+2.5 to +8V

+2.5 to +8V

0±0.2V

Off

On

On

Off

Postitive/

Negative

1,2

-Vc±0.2V

+Vc

+Vc

-Vc±0.2V

Off

On

On

Off

Negative

3

0±0.2V

-2.5V to -8V

-2.5V to -8V

0±0.2V

On

Off

Off

On

1. External DC blocking capacitors are required on all RF ports.

39pF capacitors used for positive control voltage.

2. |-V

3. If negative control is used, DC blocking capacitors are not required

on RF Ports.

PIN Configuration

PIN No.

Function

Description

1

RF1

RF in/out

2

GND

RF Ground

3

RF2

RF in/out

4

VB

V Control B

5

RFC

RF COMMON

6

VA

V Control A

Handling Procedures

The following precautions should be observed to avoid damage:

Static Sensitivity

Gallium arsenide Integrated Circuits are ESD sensitive and can

be damaged by static electricity. Proper ESD techniques should

be used when handling these devices.