GaAs SPDT Terminated Switch, DC - 3.0 GHz

SW-442

M/A-COM Division of AMP Incorporated

3 North America: Tel. (800) 366-2266, Fax (800) 618-8883 3 Asia/Pacific: Tel.+81 44 844 8296, Fax +81 44 844 8298

3 Europe: Tel. +44 (1344) 869 595, Fax+44 (1344) 300 020

www.macom.com

AMP and Connecting at a Higher Level are trademarks.

Specifications subject to change without notice.

V2.00

Functional Schematic

Positive Control Voltage

Absolute Maximum Ratings

1

Parameter

Absolute Maximum

Input Power (0.5 - 3.0 GHz)

3V Control

5V Control

+30 dBm

+33 dBm

Operating Voltage

+8.5 Volts

Operating Temperature

-40°C to +85°C

Storage Temperature

-65°C to +150°C

1. Exceeding any one or combination of these limits may cause

permanent damage.

Truth Table

Mode

(Control)

V1

V2

RFC - RF1

RFC - RF2

Positive

1

0±0.2V

+2.5 to +8V

+2.5 to +8V

0±0.2V

On

Off

Off

On

Negative

2

0±0.2V

-2.5V to -8V

-2.5V to -8V

0±0.2V

Off

On

On

Off

1. External DC blocking capacitors are required on all RF ports and

GND. GND capacitors can be used with postive control voltage to

resonate lead inductance for improved isolation.

2. If negative control is used, DC blocking capacitors and GND

capacitors are not required.

PIN Configuration

PIN No.

Function

Description

1

RF1

RF in/out

2

GND

RF Ground

3

RF2

RF in/out

4

V2

V Control 2

5

RFC

RF COMMON

6

V1

V Control 1

Handling Procedures

The following precautions should be observed to avoid damage:

Static Sensitivity

Gallium Arsenide Integrated Circuits are ESD sensitive and can

be damaged by static electricity. Proper ESD techniques should

be used when handling these devices.

RF1

GND

RF2

V1

RFC

V2

PIN 1

C=39pF

C=39pF

C=39pF

CGND

C=100pF

C=100pF

Functional Schematic

Negative Control Voltage

RF1

GND

RF2

V1

RFC

V2

PIN 1