Features

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Positive Voltage Control (0 / +5 V)

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High Isolation (53 dB typ. @ 0.9 GHz,

50 dB typ @ 1.9 GHz)

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50-Ohm Internal Terminations

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Low Insertion Loss (0.6 dB typ. @ 0.9 GHz,

0.7 dB typ. @ 1.9 GHz)

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4 mm FQFP-N 16-Lead Package

Description

The M/A-COM SW-475 GaAs monolithic switch provides

high isolation in a low-cost, plastic surface mount package.

The SW -475 is ideal for applications across a broad range

of frequencies including synthesizer switching, transmit /

receive switching, switch matrices and filter banks in

systems such as radio and cellular equipment, PCS, GPS,

and fiber optic modules.

M/A-COM fabricates the SW-475 using an 0.5-micron gate

length MESFET process. The process features full chip

passivation for performance and reliability.

Functional Schematic

Handling Procedures

The following precautions should be observed to avoid

damage:

Static Sensitivity

Gallium arsenide integrated circuits are ESD sensitive and

can be damaged by static electricity. Use proper ESD

precautions when handling these devices.

Truth Table

Pin Function Description Pin

Function Description

—

—

—

17

(pad)

GND

RF ground

1

RF2

RF port

16

GND

RF ground

2

GND

RF ground

15

GND

RF ground

3

GND

RF ground

14

GND

RF ground

4

V1

Control 1

13

GND

RF ground

5

V2

Control 2

12

RF1

RF port

6

GND

RF ground

11

GND

RF ground

7

RFC

RF port

10

GND

RF ground

8

GND

RF ground

9

GND

RF ground

Mode

(Control)

V1

V2

RFC -

RF1

RFC -

RF2

0

1

ON

OFF

1

0

OFF

ON

1. External DC blocking capacitors required on all RF ports.

We recommend 47 pF.

2. 3.0 V < VC < 8.0 V.

SPDT High Isolation Terminated Switch

0.5 - 3.0 GHz

Logic Level

Voltage Level

0 ± 0.2 V

RF2

RF1

1

2

3

4

5

6

7

8

9

10

11

12

13

14

15

16

V1

V2

PIN Configuration