IRF9395MPBF_15 datasheet(1/9 Pages) IRF

部件名	IRF9395MPBF

功能描述	Isolation Switch for Input Power or Battery Application

PDF	9 Pages

Scroll/Zoom	100%

制造商	IRF [International Rectifier]

网页	http://www.irf.com

标志

1 / 9 page

Typical values (unless otherwise specified)

Notes:

Click on this section to link to the appropriate technical paper.

Click on this section to link to the DirectFET Website.

Surface mounted on 1 in. square Cu board, steady state.

TC measured with thermocouple mounted to top (Drain) of part.

Repetitive rating; pulse width limited by max. junction temperature.

DirectFET

ISOMETRIC

Description

The IRF9395MTRPbF combines the latest HEXFET® P-Channel Power MOSFET Silicon technology with the advanced

DirectFETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of a SO-8 and only 0.6 mm

profile. The DirectFET package is compatible with existing layout geometries used in power applications, PCB assembly equipment

and vapor phase, infra-red or convection soldering techniques, when application note AN-1035 is followed regarding the

manufacturing methods and processes. The DirectFET package allows dual sided cooling to maximize thermal transfer in power

systems, improving previous best thermal resistance by 80%.

MC

Applicable DirectFET Outline and Substrate Outline (see p.7,8 for details)

DirectFET

dual P-Channel Power MOSFET

l Environmentaly Friendly Product

l RoHs Compliant Containing no Lead,

no Bromide and no Halogen

l Dual Common-Drain P-Channel MOSFETs Provides

High Level of Integration and Very Low RDS(on)

SQ

SX

ST

MQ

MX

MT

MP

MC

S

G

S

D

SS

Fig 1. Typical On-Resistance vs. Gate Voltage

Fig 2. Typical Total Gate Charge vs Gate-to-Source Voltage

Features and Benefits

Applications

l Isolation Switch for Input Power or Battery Application

Q1-Q2

Qg tot

Qgd

Qgs2

Qrr

Qoss Vgs(th)

32nC

15nC

3.2nC

62nC

23nC

-1.8V

VDSS

VGS

RDS(on)

-30V max ±20V max 5.3mΩ@-10V 9.0mΩ@-4.5V

2

4

6

8

10

12

14

16

18

20

-VGS, Gate -to -Source Voltage (V)

0

4

8

12

16

20

24

ID = -14A

TJ = 25°C

TJ = 125°C

020

40

60

80

QG Total Gate Charge (nC)

0.0

2.0

4.0

6.0

8.0

10.0

12.0

14.0

VDS= -24V

VDS= -15V

VDS= -6V

ID= -11A

Absolute Maximum Ratings

Parameter

Units

VDS

Drain-to-Source Voltage

VGS

Gate-to-Source Voltage

ID @ TA = 25°C

Continuous Drain Current, VGS @ 10V

e

ID @ TA = 70°C

Continuous Drain Current, VGS @ 10V e

ID @ TC = 25°C

Continuous Drain Current, VGS @ 10V

f

IDM

Pulsed Drain Current

g

Max.

-11

-75

-110

±20

-30

-14

V

A

1

February 24, 2014

IRF9395MPbF

Form

Quantity

IRF9395MTRPbF

DirectFET Medium Can

Tape and Reel

4800

"TR" suffix

IRF9395MTR1PbF

DirectFET Medium Can

Tape and Reel

1000

"TR1" suffix EOL notice # 264

Orderable part number

Package Type

Standard Pack

Note

类似零件编号 - IRF9395MPBF_15

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