GaAs SPDT Switch, Absorptive, Single Supply, DC - 4 GHz

SW90-0002

Specifications subject to change without notice.

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V 3.00

2

Pin Configuration

1,2,3

Pin No.

Function

Pin No.

Function

1

NC

17

NC

2

GND

18

C1

3

RFC

19

NC

4

GND

20

5

NC

21

NC

6

NC

22

NC

7

GND

23

CP1

8

RF1

24

CP2

9

GND

25

NC

10

NC

26

11

NC

27

NC

12

28

NC

13

NC

29

NC

14

30

GND

15

NC

31

RF2

16

NC

32

GND

Parameter

Absolute Maximum

Max. Input Power

0.05 GHz

0.5 - 4.0 GHz

+27 dBm

+34 dBm

Bias Voltages

Control Voltage

6

+5.5V

Operating Temperature

-40°C to +85°C

Storage Temperature

-65°C to +125°C

Absolute Maximum Ratings

4,5

4. Operation of this device above any one of these

parameters may cause permanent damage.

5. When the RF input is applied to the terminated port, the

absolute maximum power is +30 dBm.

6. Standard CMOS TTL interface, latch-up will occur if logic

signal is applied prior to power supply.

Recommended PCB Layout

7

Functional Schematic

1. NC = No Connection

2. VEE is internally generated and must remain isolated from

external power supplies.

3. Connections and external components shown in functional

schematic are required. 0.1 µF Capacitors need to be

located near pins 20 & 26.

Truth Table

Control Input

Condition of the Switch

C1

RF1

RF2

0

Off

On

1

On

Off

RF Common to each RF Port

“0” = TTL Low

“1” = TTL High

7. Application Note C2083 is available on line at

www.macom.com