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PYA28C010-15FSM 数据表(PDF) 1 Page - Pyramid Semiconductor Corporation |
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PYA28C010-15FSM 数据表(HTML) 1 Page - Pyramid Semiconductor Corporation |
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1 / 15 page ![]() Document # EEPROM103 REV 03 Revised July 2014 PYA28C010 128K x 8 EEPROM FEATURES Access Times of 120, 150, 200, and 250ns Single 5V±10% Power Supply Simple Byte and Page Write Low Power CMOS: - 60 mA Active Current - 500 µA Standby Current Fast Write Cycle Times Software Data Protection Fully TTL Compatible Inputs and Outputs Endurance: - 10,000 Cycles/byte - 100,000 Cycles/page Data Retention: 100 Years Available in the following package: – 32-Pin 600 mil Ceramic DIP – 32-Pin Ceramic LCC (450x550 mils) – 32-Pin Solder Seal Flatpack – 44-Pin Ceramic LCC (650x650 mils) FUnCTIOnAL BLOCk DIAgRAM PIn COnFIgURATIOn DIP (C10) DESCRIPTIOn The PYA28C010 is a 5 Volt 128Kx8 EEPROM using float- ing gate CMOS Technology. The device supports 64-byte page write operation. The PYA28C010 features DATA and Toggle Bit Polling as well as a system software scheme used to indicate early completion of a Write Cycle. The devicealsoincludesuser-optionalsoftwaredataprotection. Data Retention is 100 Years. The device is available in a 32-Pin 600 mil wide Ceramic DIP, 32-Pin LCC, 32-Pin Solder Seal Flatpack and 44-Pin Ceramic LCC. LCC (L6) |
类似零件编号 - PYA28C010-15FSM |
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类似说明 - PYA28C010-15FSM |
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