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LP28009 数据表(PDF) 7 Page - Lowpower Semiconductor inc

部件名 LP28009
功能描述  Internal Integrate P-MOSFETs
PDF  12 Pages
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制造商  POWER [Lowpower Semiconductor inc]
网页  http://www.lowpowersemi.com
标志 POWER - Lowpower Semiconductor inc

LP28009 数据表(HTML) 7 Page - Lowpower Semiconductor inc

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Preliminary Datasheet
LP28009
LP28009 – 02
May.-2013
Email: marketing@lowpowersemi.com
www.lowpowersemi.com
Page 7 of 12
Parameter
Symbol
Test Conditions
Min
Typ
Max
Units
Supply Input
ACIN UVP Rising Threshold Voltage
VUV_HIGH
4.4
4.5
V
ACIN UVP Hysteresis
VUV_LOW
50
80
120
mV
ACIN Standby Current
ISTBY
VBATT=4.5V
300
500
μA
ACIN Shutdown Current
ISHDN
VEN=HIGH
50
100
μA
ACIN UVP Current
IUVP
VACIN=4V,
VUSB=4V,
VBATT=3V
150
250
μA
BATT Sleep Leakage Current
ISLEEP
VACIN=4V,
VUSB=4V,
VBATT=4.5V
2
5
μA
Voltage Regulation
BATT Regulation Voltage
VREG
IBATT=60mA
4.158
4.2
4.242
V
Regulation Voltage Accuracy
-1
+1
%
ACIN MOSFET
RDS(ON)_ACIN IBATT=500mA
600
mΩ
Current Regulation
ISETA Set Voltage
(Fast Charge Phase)
VISETA
VBATT=3.5V
2.45
2.5
2.55
V
Full Charge Setting Range
ICHG_AC
100
--
1200
mA
ACIN Charge Current Accuracy
ICHG_AC
VBATT=3.8V
RISET=1.5KΩ
--
125
--
℃



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