IRFP4468PBF. datasheet(4/8 Pages) IRF

4 / 8 page

IRFP4468PbF

www.irf.com

Fig 8. Maximum Safe Operating Area

Fig 10. Drain-to-Source Breakdown Voltage

Fig 7. Typical Source-Drain Diode

Forward Voltage

Fig 11. Typical COSS Stored Energy

Fig 9. Maximum Drain Current vs.

Case Temperature

Fig 12. Maximum Avalanche Energy Vs. DrainCurrent

0.2

0.4

0.6

0.8

1.0

1.2

1.4

1.6

1.8

2.0

VSD, Source-to-Drain Voltage (V)

0.1

100

1000

TJ = 25°C

TJ = 175°C

VGS = 0V

100

125

150

175

Starting TJ, Junction Temperature (°C)

500

1000

1500

2000

2500

3000

I D

TOP

30A

41A

BOTTOM

180A

-60 -40 -20 0

20 40 60 80 100 120 140 160 180

TJ , Junction Temperature (°C)

100

110

120

ID = 5mA

100

VDS, Drain-to-Source Voltage (V)

0.0

1.0

2.0

3.0

4.0

5.0

6.0

7.0

100

125

150

175

TC , Case Temperature (°C)

100

150

200

250

300

LIMITED BY PACKAGE

0.1

100

VDS, Drain-toSource Voltage (V)

0.1

100

1000

10000

Tc = 25°C

Tj = 175°C

Single Pulse

1msec

10msec

OPERATION IN THIS AREA

LIMITED BY RDS(on)

100μsec

LIMITED BY PACKAGE

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