Parameter

Symbol

Condition

Min

Typ

Max

Unit

Gate-Body Leakage Current

-

-

±100

nA

On Characteristics

(Note 3)

Gate Threshold Voltage

-0.4

-0.7

-1

V

-

78

120

mΩ

Drain-Source On-State Resistance

-

102

160

mΩ

Forward Transconductance

6

-

-

S

Dynamic Characteristics

(Note4)

Input Capacitance

-

325

-

PF

Output Capacitance

-

63

-

PF

Reverse Transfer Capacitance

F=1.0MHz

-

37

-

PF

Switching Characteristics

(Note 4)

Turn-on Delay Time

-

11

-

nS

Turn-on Rise Time

-

5.5

-

nS

Turn-Off Delay Time

-

22

-

nS

Turn-Off Fall Time

-

8

-

nS

Total Gate Charge

-

3.2

-

nC

Gate-Source Charge

-

0.6

-

nC

Gate-Drain Charge

-

0.9

-

nC

Drain-Source Diode Characteristics

Diode Forward Voltage

(Note 3)

-

-

-1.2

V

Diode Forward Current

(Note 2)

-

-

-2.6

A

Notes:

1. Repetitive Rating: Pulse width limited by maximum junction temperature.

2. Surface Mounted on FR4 Board, t ≤ 10 sec.

3. Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2 .

%

4. Guaranteed by design, not subject to production

MS23

P01S

2/6