MS48P35 datasheet(2/6 Pages) BWTECH

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MS48P35

P-Channel 30-V (D-S) MOSFET

Publication Order Number: [MS48P35]

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

Absolute Maximum Ratings (TA=25°C unless otherwise specified)

Symbol

Parameter

Value

Unit

VDS

Drain-Source Voltage

-30

VGS

Gate-Source Voltage

±20

Continuous Drain Current

a (T

A =25°C)

-9.5

Continuous Drain Current

a (T

A =70°C)

-8.3

IDM

Pulsed Drain Current

-50

Continuous Source Current (Diode Conduction)

-4

Power Dissipation

a (T

A =25°C)

3.1

Power Dissipation

a (T

A =70°C)

2.2

TJ/TSTG

Operating Junction and Storage Temperature

-55 to +150

°C

Thermal Resistance Ratings

Symbol

Parameter

Maximum

Units

RθJA

Maximum Junction-to-Ambient

a (t <= 10 sec)

°C/W

Maximum Junction-to-Ambient

a (Steady-State)

Notes:

Surface Mounted on 1” x 1” FR4 Board.

b. Pulse width limited by maximum junction temperature

Static

Symbol

Parameter

Test Conditions

Min

Typ.

Max.

Units

VGS(th)

Gate-Threshold Voltage

VDS = VGS , ID = -250uA

-1

IGSS

Gate-Body Leakage

VDS = 0 V , VGS = ±20 V

±100

IDSS

Zero Gate Voltage Drain Current

VDS = -24 V , VGS = 0 V

VDS = -24 V , VGS = 0 V , TJ= 55°C

-1

-25

ID(on)

On-State Drain Current

VDS = -5 V , VGS = -10 V

-20

DS(on)

Drain-Source On-Resistance

VGS = -10 V , ID = -7.6 A

VGS = -4.5 V , ID = -6 A

gfs

Forward Tranconductance

VDS = -15 V , ID = -7.6 A

VSD

Diode Forward Voltage

IS = -2 A , VGS = 0 V

-0.74

Dynamic

Symbol

Parameter

Test Conditions

Min

Typ.

Max.

Units

Total Gate Charge

VDS = -15 V , ID = -7.6 A ,

VGS = -4.5 V

Qgs

Gate-Source Charge

6.8

Qgd

Gate-Drain Charge

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