IRFS7440PBF datasheet(2/12 Pages) IRF

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November 19, 2014

IRFS7440PbF/IRFSL7440PbF

Notes:

Calculated continuous current based on maximum allowable junction

temperature. Bond wire current limit is 120A. Note that current

limitations arising from heating of the device leads may occur with

some lead mounting arrangements.

(Refer to AN-1140)

Repetitive rating; pulse width limited by max. junction

temperature.

Limited by TJmax, starting TJ = 25°C, L = 0.048mH

RG = 50Ω, IAS = 100A, VGS =10V.

ISD ≤ 100A, di/dt ≤ 1330A/μs, VDD ≤ V(BR)DSS, TJ ≤ 175°C.

Pulse width ≤ 400μs; duty cycle ≤ 2%.

Coss eff. (TR) is a fixed capacitance that gives the same charging time

as Coss while VDS is rising from 0 to 80% VDSS.

Coss eff. (ER) is a fixed capacitance that gives the same energy as

Coss while VDS is rising from 0 to 80% VDSS.

Rθ is measured at TJ approximately 90°C.

Limited by TJmax starting TJ = 25°C, L= 1mH, RG = 50Ω, IAS = 34A, VGS =10V.

Absolute Maximum Ratings

Symbol

Parameter

Units

ID @ TC = 25°C

Continuous Drain Current, VGS @ 10V

ID @ TC = 100°C

Continuous Drain Current, VGS @ 10V

ID @ TC = 25°C

Continuous Drain Current, VGS @ 10V (Wire Bond Limited)

IDM

Pulsed Drain Current d

PD @TC = 25°C

Maximum Power Dissipation

Linear Derating Factor

W/°C

VGS

Gate-to-Source Voltage

Operating Junction and

TSTG

Storage Temperature Range

Soldering Temperature, for 10 seconds (1.6mm from case)

Mounting torque, 6-32 or M3 screw

Avalanche Characteristics

EAS (Thermally limited)

Single Pulse Avalanche Energy e

EAS (Thermally limited)

Single Pulse Avalanche Energy k

IAR

Avalanche CurrentÃd

EAR

Repetitive Avalanche Energy d

Thermal Resistance

Symbol

Parameter

Typ.

Max.

Units

RθJC

Junction-to-Case j

–––

0.72

RθCS

Case-to-Sink, Flat Greased Surface

0.50

–––

RθJA

Junction-to-Ambient

–––

°C/W

°C

300

238

See Fig. 14, 15, 22a, 22b

208

Max.

208

147

772

120

560

-55 to + 175

± 20

1.4

10lbfx in (1.1Nx m)

Static @ TJ = 25°C (unless otherwise specified)

Symbol

Parameter

Min.

Typ.

Max.

Units

V(BR)DSS

Drain-to-Source Breakdown Voltage

–––

ΔV(BR)DSS/ΔTJ

Breakdown Voltage Temp. Coefficient

–––

0.035

–––

V/°C

RDS(on)

Static Drain-to-Source On-Resistance

–––

2.0

2.5

–––

3.0

–––

VGS(th)

Gate Threshold Voltage

2.2

3.0

3.9

IDSS

Drain-to-Source Leakage Current

–––

1.0

μA

–––

150

IGSS

Gate-to-Source Forward Leakage

–––

100

Gate-to-Source Reverse Leakage

–––

-100

Internal Gate Resistance

–––

2.6

–––

Conditions

VGS = 0V, ID = 250μA

Reference to 25°C, ID = 5.0mA d

VGS = 10V, ID = 100A g

VGS = 6.0V, ID = 50A g

VGS = -20V

VDS = 40V, VGS = 0V

VDS = VGS, ID = 100μA

VGS = 20V

VDS = 40V, VGS = 0V, TJ = 125°C

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