IRFS7537PBF datasheet(2/13 Pages) IRF

2 / 13 page

www.irf.com

Submit Datasheet Feedback

October 7, 2014

IRFB/S/SL7537PbF

Absolute Maximum Rating

Symbol

Parameter

Max.

Units

ID @ TC = 25°C

Continuous Drain Current, VGS @ 10V

173

ID @ TC = 100°C

Continuous Drain Current, VGS @ 10V

122

IDM

Pulsed Drain Current 

700

PD @TC = 25°C

Maximum Power Dissipation

230

Linear Derating Factor

1.5

W/°C

VGS

Gate-to-Source Voltage

± 20

TSTG

Operating Junction and

Storage Temperature Range

-55 to + 175

°C

Soldering Temperature, for 10 seconds (1.6mm from case)

300

Mounting Torque, 6-32 or M3 Screw

10 lbf·in (1.1 N·m)

Avalanche Characteristics

EAS

Single Pulse Avalanche Energy 

270

EAS (L=1mH)

Single Pulse Avalanche Energy 

554

IAR

Avalanche Current 

See Fig 15, 16, 23a, 23b

EAR

Repetitive Avalanche Energy 

Thermal Resistance

Symbol

Parameter

Typ.

Max.

Units

RJC

Junction-to-Case 

–––

0.65

°C/W

RCS

Case-to-Sink, Flat Greased Surface

0.50

–––

RJA

Junction-to-Ambient (TO-220) 

–––

RJA

Junction-to-Ambient (PCB Mount) (D2-Pak)

–––

Static @ TJ = 25°C (unless otherwise specified)

Symbol

Parameter

Min. Typ. Max.

Units

Conditions

V(BR)DSS

Drain-to-Source Breakdown Voltage

–––

VGS = 0V, ID = 250µA

V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient

–––

mV/°C Reference to 25°C, ID = 1mA 

RDS(on)

–––

2.75 3.30



VGS = 10V, ID = 100A 

–––

3.50

–––

VGS = 6.0V, ID = 50A 

VGS(th)

Gate Threshold Voltage

2.1

–––

3.7

VDS = VGS, ID = 150µA

IDSS

Drain-to-Source Leakage Current

–––

1.0

µA

VDS =60 V, VGS = 0V

–––

150

VDS =60V,VGS = 0V,TJ =125°C

IGSS

Gate-to-Source Forward Leakage

–––

100

VGS = 20V

Gate-to-Source Reverse Leakage

–––

-100

VGS = -20V

Gate Resistance

–––

2.0

–––



Static Drain-to-Source On-Resistance

Notes:



Repetitive rating; pulse width limited by max. junction temperature.



Limited by TJmax, starting TJ = 25°C, L = 54µH, RG = 50, IAS = 100A, VGS =10V.



ISD  100A, di/dt  1130A/µs, VDD  V(BR)DSS, TJ 175°C.



Pulse width

 400µs; duty cycle  2%.



Coss eff. (TR) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS.



Coss eff. (ER) is a fixed capacitance that gives the same energy as Coss while VDS is rising from 0 to 80% VDSS.



R is measured at TJ approximately 90°C.



When mounted on 1" square PCB (FR-4 or G-10 Material). For recommended footprint and soldering techniques

refer to application note #AN-994.: http://www.irf.com/technical-info/appnotes/an-994.pdf



Limited by TJmax, starting TJ = 25°C, L = 1mH, RG = 50, IAS = 33A, VGS =10V.

IRFS7537PBF 数据表(PDF) 2 Page - International Rectifier

IRFS7537PBF 数据表(HTML) 2 Page - International Rectifier

Html Pages

1 2 3 4 5 6 7 8 9 10 11 12 13

数据表下载

链接网址

IRFS7537PBF 数据表(PDF) 2 Page - International Rectifier

IRFS7537PBF 数据表(HTML) 2 Page - International Rectifier

Html Pages

1 2 3 4 5 6 7 8 9 10 11 12 13

数据表 下载

链接网址

数据表下载