IRFZ44VPbF

09/30/10

Parameter

Max.

Units

55

39

A

Pulsed Drain Current



220

Power Dissipation

115

W

Linear Derating Factor

0.77

W/°C

Gate-to-Source Voltage

± 20

V

Single Pulse Avalanche Energy

‚

115

mJ

Avalanche Current



55

A

Repetitive Avalanche Energy



11

mJ

dv/dt

Peak Diode Recovery dv/dt

ƒ

4.5

V/ns

Operating Junction and

-55 to + 175

Storage Temperature Range

Soldering Temperature, for 10 seconds

300 (1.6mm from case )

°C

Mounting torque, 6-32 or M3 srew

10 lbf•in (1.1N•m)

Absolute Maximum Ratings

Parameter

Typ.

Max.

Units

Junction-to-Case

–––

1.3

Case-to-Sink, Flat, Greased Surface

0.50

–––

°C/W

Junction-to-Ambient

–––

62

Thermal Resistance

www.irf.com

1

S

D

G

TO-220AB

Rectifier utilize advanced processing techniques to

achieve extremely low on-resistance per silicon area.

This benefit, combined with the fast switching speed and

ruggedized device design that HEXFET power MOSFETs

are well known for, provides the designer with an

extremely efficient and reliable device for use in a wide

variety of applications.

The TO-220 package is universally preferred for all

commercial-industrial applications at power dissipation

levels to approximately 50 watts. The low thermal

resistance and low package cost of the TO-220 contribute

to its wide acceptance throughout the industry.

Description

PD - 94826A