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IRGS4045DPBF 数据表(PDF) 6 Page - International Rectifier

部件名 IRGS4045DPBF
功能描述  INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
PDF  12 Pages
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制造商  IRF [International Rectifier]
网页  http://www.irf.com
标志 IRF - International Rectifier

IRGS4045DPBF 数据表(HTML) 6 Page - International Rectifier

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IRGS4045DPbF
www.irf.com © 2012 International Rectifier
October 10, 2012
6
Fig. 20 - Typical Diode QRR
VCC= 400V; VGE= 15V; TJ = 175°C
Fig. 19- Typical Diode IRR vs. diF/dt
VCC= 400V; VGE= 15V;
ICE= 6.0A; TJ = 175°C
Fig. 24 - Typical Gate Charge vs. VGE
ICE = 6.0A, L=600μH
Fig. 23- Typ. Capacitance vs. VCE
VGE= 0V; f = 1MHz
Fig. 22- Typ. VGE vs. Short Circuit Time
VCC=400V, TC =25°C
Fig. 21 - Typical Diode ERR vs. IF
TJ = 175°C
0
100
200
300
400
500
VCE (V)
1
10
100
1000
Cies
Coes
Cres
0
200
400
600
800
1000 1200
diF /dt (A/μs)
6
8
10
12
14
16
18
20
2
4
6
8
10
12
14
IF (A)
50
100
150
200
250
300
350
RG = 10
RG = 22
RG = 47
RG = 100
8
1012
14
1618
VGE (V)
0
5
10
15
20
10
20
30
40
50
Tsc
Isc
0
2
4
6
8
10
12
14
Q G, Total Gate Charge (nC)
0
2
4
6
8
10
12
14
16
VCES= 400V
VCES= 300V
0
500
1000
1500
diF /dt (A/μs)
200
400
600
800
1000
1200
10
22
100
47
6.0A
12A
3.0A



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