IRGS4056DPBF datasheet(2/11 Pages) IRF

2 / 11 page

IRGS4056DPbF

www.irf.com

Notes:

VCC = 80% (VCES), VGE = 20V, L = 100µH, RG = 22Ω.

This is only applied to TO-220AB package.

Pulse width limited by max. junction temperature.

Refer to AN-1086 for guidelines for measuring V

(BR)CES safely.

Electrical Characteristics @ TJ = 25°C (unless otherwise specified)

Parameter

Min.

Typ. Max. Units

Conditions

Ref.Fig

V(BR)CES

Collector-to-Emitter Breakdown Voltage

600

——V

VGE = 0V, IC = 100µA f

CT6

∆V(BR)CES/∆TJ

Temperature Coeff. of Breakdown Voltage

—0.30—

V/°C VGE = 0V, IC = 1mA (25°C-175°C)

CT6

—1.55

1.85

IC = 12A, VGE = 15V, TJ = 25°C

5,6,7

VCE(on)

Collector-to-Emitter Saturation Voltage

—

1.90

—

IC = 12A, VGE = 15V, TJ = 150°C

9,10,11

—1.97—

IC = 12A, VGE = 15V, TJ = 175°C

VGE(th)

Gate Threshold Voltage

4.0

—

6.5

VCE = VGE, IC = 350µA

9, 10,

∆VGE(th)/∆TJ

Threshold Voltage temp. coefficient

—

-18

—

mV/°C VCE = VGE, IC = 1.0mA (25°C - 175°C)

11, 12

gfe

Forward Transconductance

—

7.7

—

VCE = 50V, IC = 12A, PW = 80µs

ICES

Collector-to-Emitter Leakage Current

—

2.0

µA

VGE = 0V, VCE = 600V

—475

—

VGE = 0V, VCE = 600V, TJ = 175°C

VFM

Diode Forward Voltage Drop

—

2.10

3.10

IF = 12A

—1.61—

IF = 12A, TJ = 175°C

IGES

Gate-to-Emitter Leakage Current

—

±100

VGE = ±20V

Switching Characteristics @ TJ = 25°C (unless otherwise specified)

Parameter

Min.

Typ. Max. Units

Ref.Fig

Total Gate Charge (turn-on)

—

IC = 12A

Qge

Gate-to-Emitter Charge (turn-on)

—

7.0

nC VGE = 15V

CT1

Qgc

Gate-to-Collector Charge (turn-on)

—

VCC = 400V

Eon

Turn-On Switching Loss

—

118

IC = 12A, VCC = 400V, VGE = 15V

CT4

Eoff

Turn-Off Switching Loss

—

225

273

µJ

RG = 22Ω, L = 200µH, LS = 150nH, TJ = 25°C

Etotal

Total Switching Loss

—

300

391

Energy losses include tail & diode reverse recovery

td(on)

Turn-On delay time

—

IC = 12A, VCC = 400V, VGE = 15V

CT4

Rise time

—

RG = 22Ω, L = 200µH, LS = 150nH, TJ = 25°C

td(off)

Turn-Off delay time

—

Fall time

—

Eon

Turn-On Switching Loss

—

185

—

IC = 12A, VCC = 400V, VGE=15V

13, 15

Eoff

Turn-Off Switching Loss

—

355

—

µJ

RG=22Ω, L=100µH, LS=150nH, TJ = 175°C

fÃ

CT4

Etotal

Total Switching Loss

—

540

—

Energy losses include tail & diode reverse recovery

WF1, WF2

td(on)

Turn-On delay time

—

IC = 12A, VCC = 400V, VGE = 15V

14, 16

Rise time

—

RG = 22Ω, L = 200µH, LS = 150nH

CT4

td(off)

Turn-Off delay time

—

102

—

TJ = 175°C

WF1

Fall time

—

WF2

Cies

Input Capacitance

—

765

—

VGE = 0V

Coes

Output Capacitance

—

VCC = 30V

Cres

Reverse Transfer Capacitance

—

f = 1.0Mhz

TJ = 175°C, IC = 48A

RBSOA

Reverse Bias Safe Operating Area

FULL SQUARE

VCC = 480V, Vp =600V

CT2

Rg = 22

Ω, VGE = +15V to 0V

SCSOA

Short Circuit Safe Operating Area

—

µs

VCC = 400V, Vp =600V

22, CT3

Rg = 22

Ω, VGE = +15V to 0V

WF4

Erec

Reverse Recovery Energy of the Diode

—

280

—

µJ

TJ = 175°C

17, 18, 19

trr

Diode Reverse Recovery Time

—

VCC = 400V, IF = 12A

20, 21

Irr

Peak Reverse Recovery Current

—

VGE = 15V, Rg = 22Ω, L =200µH, Ls = 150nH

WF3

Conditions

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