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IRGS4062DPBF 数据表(PDF) 2 Page - International Rectifier |
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IRGS4062DPBF 数据表(HTML) 2 Page - International Rectifier |
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2 / 12 page  IRGS/SL4062DPbF 2 www.irf.com Notes: VCC = 80% (VCES), VGE = 20V, L = 100µH, RG = 10Ω. Pulse width limited by max. junction temperature. Refer to AN-1086 for guidelines for measuring V (BR)CES safely. Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Parameter Min. Typ. Max. Units Conditions Ref.Fig V(BR)CES Collector-to-Emitter Breakdown Voltage 600 — — V VGE = 0V, IC = 100µA e CT6 ∆V(BR)CES/∆TJ Temperature Coeff. of Breakdown Voltage —0.30 — V/°C VGE = 0V, IC = 1mA (25°C-175°C) CT6 — 1.60 1.95 IC = 24A, VGE = 15V, TJ = 25°C 5,6,7 VCE(on) Collector-to-Emitter Saturation Voltage — 2.03 — V IC = 24A, VGE = 15V, TJ = 150°C 9,10,11 —2.04 — IC = 24A, VGE = 15V, TJ = 175°C VGE(th) Gate Threshold Voltage 4.0 — 6.5 V VCE = VGE, IC = 700µA 9, 10, ∆VGE(th)/∆TJ Threshold Voltage temp. coefficient — -18 — mV/°C VCE = VGE, IC = 1.0mA (25°C - 175°C) 11, 12 gfe Forward Transconductance — 17 — S VCE = 50V, IC = 24A, PW = 80µs ICES Collector-to-Emitter Leakage Current — 2.0 25 µA VGE = 0V, VCE = 600V —775 — VGE = 0V, VCE = 600V, TJ = 175°C VFM Diode Forward Voltage Drop — 1.80 2.6 V IF = 24A 8 —1.28 — IF = 24A, TJ = 175°C IGES Gate-to-Emitter Leakage Current — — ±100 nA VGE = ±20V Switching Characteristics @ TJ = 25°C (unless otherwise specified) Parameter Min. Typ. Max. Units Ref.Fig Qg Total Gate Charge (turn-on) — 50 75 IC = 24A 24 Qge Gate-to-Emitter Charge (turn-on) — 13 20 nC VGE = 15V CT1 Qgc Gate-to-Collector Charge (turn-on) — 21 31 VCC = 400V Eon Turn-On Switching Loss — 115 201 IC = 24A, VCC = 400V, VGE = 15V CT4 Eoff Turn-Off Switching Loss — 600 700 µJ RG = 10Ω, L = 200µH, LS = 150nH, TJ = 25°C Etotal Total Switching Loss — 715 901 Energy losses include tail & diode reverse recovery td(on) Turn-On delay time — 41 53 IC = 24A, VCC = 400V, VGE = 15V CT4 tr Rise time — 22 31 ns RG = 10Ω, L = 200µH, LS = 150nH, TJ = 25°C td(off) Turn-Off delay time — 104 115 tf Fall time — 29 41 Eon Turn-On Switching Loss — 420 — IC = 24A, VCC = 400V, VGE=15V 13, 15 Eoff Turn-Off Switching Loss — 840 — µJ RG=10Ω, L=100µH, LS=150nH, TJ = 175°C eà CT4 Etotal Total Switching Loss — 1260 — Energy losses include tail & diode reverse recovery WF1, WF2 td(on) Turn-On delay time — 40 — IC = 24A, VCC = 400V, VGE = 15V 14, 16 tr Rise time — 24 — ns RG = 10Ω, L = 200µH, LS = 150nH CT4 td(off) Turn-Off delay time — 125 — TJ = 175°C WF1 tf Fall time — 39 — WF2 Cies Input Capacitance — 1490 — pF VGE = 0V 23 Coes Output Capacitance — 129 — VCC = 30V Cres Reverse Transfer Capacitance — 45 — f = 1.0Mhz TJ = 175°C, IC = 96A 4 RBSOA Reverse Bias Safe Operating Area FULL SQUARE VCC = 480V, Vp =600V CT2 Rg = 10 Ω, VGE = +15V to 0V SCSOA Short Circuit Safe Operating Area 5 — — µs VCC = 400V, Vp =600V 22, CT3 Rg = 10 Ω, VGE = +15V to 0V WF4 Erec Reverse Recovery Energy of the Diode — 621 — µJ TJ = 175°C 17, 18, 19 trr Diode Reverse Recovery Time — 89 — ns VCC = 400V, IF = 24A 20, 21 Irr Peak Reverse Recovery Current — 37 — A VGE = 15V, Rg = 10Ω, L =200µH, Ls = 150nH WF3 Conditions |
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