IRGS4607DPBF datasheet(2/16 Pages) IRF

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IRGR/S/B4607DPbF

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November 14, 2014

Electrical Characteristics @ TJ = 25°C (unless otherwise specified)

Parameter

Min.

Typ.

Max.

Units

Conditions

V(BR)CES

Collector-to-Emitter Breakdown Voltage

600

—

VGE = 0V, IC = 100µA 

V(BR)CES/TJ Temperature Coeff. of Breakdown Voltage

—

0.52

—

V/°C VGE = 0V, IC = 100µA (25°C-175°C)

VCE(on)

Collector-to-Emitter Saturation Voltage

—

1.75

2.05

IC = 4.0A, VGE = 15V, TJ = 25°C

—

2.15

—

IC = 4.0A, VGE = 15V, TJ = 150°C

—

2.20

—

IC = 4.0A, VGE = 15V, TJ = 175°C

VGE(th)

Gate Threshold Voltage

4.0

—

6.5

VCE = VGE, IC = 100µA

VGE(th)/TJ

Threshold Voltage Temperature Coeff.

—

-19

—

mV/°C VCE = VGE, IC =100µA (25°C-175°C)

gfe

Forward Transconductance

—

2.2

—

VCE = 50V, IC = 4.0A, PW = 20µs

ICES

Collector-to-Emitter Leakage Current

—

0.50

µA

VGE = 0V, VCE = 600V

—

100

—

VGE = 0V, VCE = 600V, TJ = 175°C

IGES

Gate-to-Emitter Leakage Current

—

±100

VGE = ±20V

Diode Forward Voltage Drop

—

1.7

2.3

IF = 4.0A

—

1.5

—

IF = 4.0A, TJ = 175°C

Thermal Resistance

Parameter

Min.

Typ.

Max.

Units

RJC (IGBT)

Thermal Resistance, Junction-to-Case (IGBT) 

–––

2.6

RJC (Diode) Thermal Resistance, Junction-to-Case (Diode) 

–––

8.3

RCS

Thermal Resistance, Case-to-Sink (flat, greased surface) (TO-220)

–––

0.50

–––

°C/W

RJA

Thermal Resistance, Junction-to-Ambient (PCB Mount) (D-Pak) 

–––

Thermal Resistance, Junction-to-Ambient (PCB Mount) (D2-Pak) 

–––

Thermal Resistance, Junction-to-Ambient (Socket Mount) (TO-220)

–––

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