IRGS4610DPBF datasheet(2/16 Pages) IRF

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IRGR/S/B4610DPbF

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November 14, 2014

Notes:

VCC = 80% (VCES), VGE = 20V, L = 1.0mH, RG = 100Ω.

Rθ is measured at TJ approximately 90°C.

Refer to AN-1086 for guidelines for measuring V

(BR)CES safely.

Pulse width limited by max. junction temperature.

Values influenced by parasitic L and C in measurement

When mounted on 1" square PCB (FR-4 or G-10 Material). For recommended footprint and soldering techniques refer to application

note #AN-994: http://www.irf.com/technical-info/appnotes/an-994.pdf

Thermal Resistance

Parameter

Min.

Typ.

Max.

Units

RθJC

Thermal Resistance, Junction-to-Case -(IGBT)d

–––

1.9

RθJC

Thermal Resistance, Junction-to-Case -(Diode)d

–––

6.3

RθCS

Thermal Resistance, Case-to-Sink (flat, greased surface) (TO-220)

–––

0.5

–––

Thermal Resistance, Junction-to-Ambient (PCB mount) (D-PAK)h

–––

Thermal Resistance, Junction-to-Ambient (D-PAK)

–––

110

Thermal Resistance, Junction-to-Ambient (PCB mount, Steady State)

2PAK)h

–––

Thermal Resistance, Junction-to-Ambient ( Socket mount) (TO-220)

–––

RθJA

°C/W

Electrical Characteristics @ TJ = 25°C (unless otherwise specified)

Parameter

Min.

Typ.

Max. Units

Conditions

V(BR)CES

Collector-to-Emitter Breakdown Voltage

600

—

VGE = 0V, Ic =100 μA e

ΔV(BR)CES/ΔTJ Temperature Coeff. of Breakdown Voltage

—

0.36

—

V/°C VGE = 0V, Ic = 250μA ( 25 -175

oC )

—1.7

2.0

IC = 6.0A, VGE = 15V, TJ = 25°C

VCE(on)

Collector-to-Emitter Saturation Voltage

—

2.07

—

IC = 6.0A, VGE = 15V, TJ = 150°C

—2.14

—

IC = 6.0A, VGE = 15V, TJ = 175°C

VGE(th)

Gate Threshold Voltage

4.0

—

6.5

VCE = VGE, IC = 150μA

ΔVGE(th)/ΔTJ Threshold Voltage temp. coefficient

—

-13

—mV/°C VCE = VGE, IC = 250μA ( 25 -175

oC )

gfe

Forward Transconductance

—

5.8

—

VCE = 25V, IC = 6.0A, PW =80μS

ICES

——

μAVGE = 0V,VCE = 600V

——

250

VGE = 0V, VCE = 600V, TJ =175°C

VFM

—1.60

2.30

IF = 6.0A

—1.30

—

IF = 6.0A, TJ = 175°C

IGES

Gate-to-Emitter Leakage Current

—

±100

VGE = ± 20 V

Diode Forward Voltage Drop

Collector-to-Emitter Leakage Current

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