IRL1404ZPBF datasheet(2/12 Pages) IRF

2 / 12 page

IRL1404Z/S/LPbF

www.irf.com

Notes:

Repetitive rating; pulse width limited by

max. junction temperature. (See fig. 11).

Limited by TJmax, starting TJ = 25°C,

L = 0.079mH, RG = 25

Ω, IAS = 75A, VGS =10V.

Part not recommended for use above this value.

Pulse width ≤ 1.0ms; duty cycle ≤ 2%.

Coss eff. is a fixed capacitance that gives the same

charging time as Coss while VDS is rising from 0 to

80% VDSS .

Limited by TJmax , see Fig.12a, 12b, 15, 16 for typical

repetitive avalanche performance.

This value determined from sample failure population. 100%

tested to this value in production.

This is only applied to TO-220AB package.

When mounted on 1" square PCB (FR-4 or G-10 Material).

For recommended footprint and soldering techniques

refer to application note #AN-994.

Calculated continuous current based on maximum allowable

junction temperature. Bond wire current limit is 120A. Note that

current limitations arising from heating of the device leads may

occur with some lead mounting arrangements.

All AC and DC test condition based on former Package limited

current of 75A.

Electrical Characteristics @ TJ = 25°C (unless otherwise specified)

Parameter

Min.

Typ.

Max.

Units

V(BR)DSS

Drain-to-Source Breakdown Voltage

–––

ΔV(BR)DSS/ΔTJ

Breakdown Voltage Temp. Coefficient

–––

0.034

–––

V/°C

–––

2.5

3.1

RDS(on)

Static Drain-to-Source On-Resistance

–––

4.7

–––

5.9

VGS(th)

Gate Threshold Voltage

1.4

–––

2.7

gfs

Forward Transconductance

120

–––

IDSS

Drain-to-Source Leakage Current

–––

μA

–––

250

IGSS

Gate-to-Source Forward Leakage

–––

200

Gate-to-Source Reverse Leakage

–––

-200

Total Gate Charge

–––

110

Qgs

Gate-to-Source Charge

–––

Qgd

Gate-to-Drain ("Miller") Charge

–––

td(on)

Turn-On Delay Time

–––

Rise Time

–––

180

–––

td(off)

Turn-Off Delay Time

–––

Fall Time

–––

Internal Drain Inductance

–––

4.5

–––

Between lead,

6mm (0.25in.)

Internal Source Inductance

–––

7.5

–––

from package

and center of die contact

Ciss

Input Capacitance

–––

5080

–––

Coss

Output Capacitance

–––

970

–––

Crss

Reverse Transfer Capacitance

–––

570

–––

Coss

Output Capacitance

–––

3310

–––

Coss

Output Capacitance

–––

870

–––

Coss eff.

Effective Output Capacitance

–––

1280

–––

Source-Drain Ratings and Characteristics

Parameter

Min.

Typ.

Max.

Units

Continuous Source Current

–––

200k

(Body Diode)

ISM

Pulsed Source Current

–––

790

(Body Diode)Ã

VSD

Diode Forward Voltage

–––

1.3

trr

Reverse Recovery Time

–––

Qrr

Reverse Recovery Charge

–––

ton

Forward Turn-On Time

Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)

VDS = 40V, VGS = 0V, TJ = 125°C

MOSFET symbol

showing the

integral reverse

p-n junction diode.

VGS = 16V

VGS = -16V

VDS = 32V

Conditions

VGS = 5.0V e

ID = 75A lÃ

VGS = 0V

VDS = 25V

TJ = 25°C, IS = 75A l, VGS = 0V e

TJ = 25°C, IF = 75A l, VDD = 20V

di/dt = 100A/μs e

Conditions

VGS = 0V, ID = 250μA

Reference to 25°C, ID = 1mA

VGS = 10V, ID = 75A elÃ

VDS = VGS, ID = 250μA

VDS = 40V, VGS = 0V

VGS = 4.5V, ID = 40A e

VGS = 5.0V, ID = 40A e

VGS = 0V, VDS = 1.0V, ƒ = 1.0MHz

VGS = 0V, VDS = 32V, ƒ = 1.0MHz

VGS = 0V, VDS = 0V to 32V f

VGS = 5.0V e

VDD = 20V

ID = 75A lÃ

RG = 4.0Ω

VDS = 10V, ID = 75Al

ƒ = 1.0MHz

IRL1404ZPBF 数据表(PDF) 2 Page - International Rectifier

IRL1404ZPBF 数据表(HTML) 2 Page - International Rectifier

Html Pages

1 2 3 4 5 6 7 8 9 10 11 12

数据表下载

链接网址

IRL1404ZPBF 数据表(PDF) 2 Page - International Rectifier

IRL1404ZPBF 数据表(HTML) 2 Page - International Rectifier

Html Pages

1 2 3 4 5 6 7 8 9 10 11 12

数据表 下载

链接网址

数据表下载