IRL3803VPBF datasheet(2/9 Pages) IRF

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IRL3803VPbF

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Parameter

Min. Typ. Max. Units

Conditions

Continuous Source Current

MOSFET symbol

(Body Diode)

–––

showing the

ISM

Pulsed Source Current

integral reverse

(Body Diode)

–––

p-n junction diode.

VSD

Diode Forward Voltage

–––

1.2

TJ = 25°C, IS = 71A, VGS = 0V

trr

Reverse Recovery Time

–––

TJ = 25°C, IF = 71A

Qrr

Reverse Recovery Charge

–––

140

di/dt = 100A/µs

ton

Forward Turn-On Time

Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)

Source-Drain Ratings and Characteristics

140

470

Starting TJ = 25°C, L = 160µH

RG = 25Ω, IAS = 71A, VGS=10V (See Figure 12)

Repetitive rating; pulse width limited by

max. junction temperature. (See fig. 11)

Notes:

ISD ≤ 71A, di/dt ≤ 110A/µs, VDD ≤ V(BR)DSS,

TJ ≤ 175°C

Pulse width ≤ 400µs; duty cycle ≤ 2%.

This is a typical value at device destruction and represents

operation outside rated limits.

This is a calculated value limited to TJ = 175°C .

Calculated continuous current based on maximum allowable

junction temperature. Package limitation current is 75A.

Parameter

Min. Typ. Max. Units

Conditions

V(BR)DSS

Drain-to-Source Breakdown Voltage

–––

VGS = 0V, ID = 250µA

∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient

––– 0.028 –––

V/°C Reference to 25°C, ID = 1mA

–––

5.5

VGS = 10V, ID = 71A

–––

7.5

VGS = 4.5V, ID = 59A

VGS(th)

Gate Threshold Voltage

1.0

–––

VDS = VGS, ID = 250µA

gfs

Forward Transconductance

–––

VDS = 25V, ID = 71A

–––

µA

VDS = 30V, VGS = 0V

–––

250

VDS = 24V, VGS = 0V, TJ = 150°C

Gate-to-Source Forward Leakage

–––

100

VGS = 16V

Gate-to-Source Reverse Leakage

–––

––– -100

VGS = -16V

Total Gate Charge

–––

ID = 71A

Qgs

Gate-to-Source Charge

–––

VDS = 24V

Qgd

Gate-to-Drain ("Miller") Charge

–––

VGS = 4.5V, See Fig. 6 and 13

td(on)

Turn-On Delay Time

–––

VDD = 15V

Rise Time

–––

180

–––

ID = 71A

td(off)

Turn-Off Delay Time

–––

RG = 1.3Ω

Fall Time

–––

VGS = 4.5V, See Fig. 10

Between lead,

6mm (0.25in.)

from package

and center of die contact

Ciss

Input Capacitance

––– 3720 –––

VGS = 0V

Coss

Output Capacitance

––– 1480 –––

VDS = 25V

Crss

Reverse Transfer Capacitance

–––

270

–––

ƒ = 1.0MHz, See Fig. 5

EAS

Single Pulse Avalanche Energy

––– 1560

400 mJ

IAS = 71A, L = 0.16mH

Electrical Characteristics @ TJ = 25°C (unless otherwise specified)

RDS(on)

Static Drain-to-Source On-Resistance

IGSS

Internal Source Inductance

–––

7.5

–––

Internal Drain Inductance

–––

4.5

–––

IDSS

Drain-to-Source Leakage Current

Ω

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