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IRLL024ZPBF 数据表(PDF) 2 Page - International Rectifier |
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IRLL024ZPBF 数据表(HTML) 2 Page - International Rectifier |
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2 / 10 page  IRLL024ZPbF 2 www.irf.com Notes: Repetitive rating; pulse width limited by max. junction temperature. (See fig. 11). Limited by TJmax, starting TJ = 25°C, L = 4.8mH RG = 25Ω, IAS = 3.0A, VGS =10V. Part not recommended for use above this value. Pulse width ≤ 1.0ms; duty cycle ≤ 2%. Coss eff. is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS.
Limited by TJmax , see Fig.12a, 12b, 15, 16 for typical repetitive avalanche performance. This value determined from sample failure population. 100% tested to this value in production. When mounted on 1 inch square copper board. When mounted on FR-4 board using minimum recommended footprint. S D G Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Parameter Min. Typ. Max. Units V(BR)DSS Drain-to-Source Breakdown Voltage 55 ––– ––– V ∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient ––– 0.049 ––– V/°C ––– 48 60 RDS(on) Static Drain-to-Source On-Resistance ––– ––– 80 m Ω ––– ––– 100 VGS(th) Gate Threshold Voltage 1.0 ––– 3.0 V gfs Forward Transconductance 7.5 ––– ––– S IDSS Drain-to-Source Leakage Current ––– ––– 20 µA ––– ––– 250 IGSS Gate-to-Source Forward Leakage ––– ––– 200 nA Gate-to-Source Reverse Leakage ––– ––– -200 Qg Total Gate Charge ––– 7.0 11 Qgs Gate-to-Source Charge ––– 1.5 ––– nC Qgd Gate-to-Drain ("Miller") Charge ––– 4.0 ––– td(on) Turn-On Delay Time ––– 8.6 ––– tr Rise Time ––– 33 ––– ns td(off) Turn-Off Delay Time ––– 20 ––– tf Fall Time ––– 15 ––– Ciss Input Capacitance ––– 380 ––– Coss Output Capacitance ––– 66 ––– Crss Reverse Transfer Capacitance ––– 36 ––– pF Coss Output Capacitance ––– 220 ––– Coss Output Capacitance ––– 53 ––– Coss eff. Effective Output Capacitance ––– 93 ––– Source-Drain Ratings and Characteristics Parameter Min. Typ. Max. Units IS Continuous Source Current ––– ––– 5.0 (Body Diode) A ISM Pulsed Source Current ––– ––– 40 (Body Diode) Ã VSD Diode Forward Voltage ––– ––– 1.3 V trr Reverse Recovery Time ––– 15 23 ns Qrr Reverse Recovery Charge ––– 9.1 14 nC ton Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) VDS = 25V ƒ = 1.0MHz VGS = 0V, VDS = 0V to 44V f TJ = 25°C, IF = 3.0A, VDD = 28V di/dt = 100A/µs e Conditions VGS = 0V, ID = 250µA Reference to 25°C, ID = 1mA VGS = 10V, ID = 3.0A e VDS = VGS, ID = 250µA VDS = 55V, VGS = 0V VDS = 55V, VGS = 0V, TJ = 125°C MOSFET symbol VDD = 28V ID = 3.0A RG = 56 Ω TJ = 25°C, IS = 3.0A, VGS = 0V e showing the integral reverse p-n junction diode. Conditions VGS = 5.0V e VGS = 0V VGS = 5.0V, ID = 3.0A e VGS = 4.5V, ID = 3.0A e VGS = 0V, VDS = 1.0V, ƒ = 1.0MHz VGS = 0V, VDS = 44V, ƒ = 1.0MHz VDS = 25V, ID = 3.0A ID = 3.0A VDS = 44V VGS = 16V VGS = -16V VGS = 5.0V e |
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