2

Symbol

Parameters

Unit

Max

V

5.5

Gate Supply Voltage

V

-2 to 0

W6

dBm

20

°C

+150

Storage Case Temp.

°C

-65 to +155

Maximum Assembly Temp (30 sec max)

°C

+260

Note:

1. Operation in excess of any one of these conditions may result in permanent damage to this device.

3. These ratings apply to each individual FET

4. The operating channel temperature will directly affect the device MTTF. For maximum life, it is recommended that junction temperatures be

maintained at the lowest possible levels.

Symbol

Parameters and Test Conditions

Unit

Min

Typ

Max

Drain Supply Current

mA

700

Gate Supply Operating Voltage

V

-1.3

-1

-0.7

Thermal Resistance

(Channel-to-Base Plate)

°C/W

12

Channel Temperature

°C

150

Note:

1. Assume die epoxied to evaluation RF module at 92.25°C base plate temperature.

:

Symbol

Parameters and Test Conditions

Units

Minimum

Typical

Maximum

Freq

Operational Frequency

GHz

37

40

Gain

dB

20

23

dBm

28

30

IM3

Relative third Order Inter-modulation Level

'f=20MHz, Po=+18dBm, SCL

dBc

37

Input Return Loss

dB

8

Output Return Loss

dB

8

Isolation

Reverse Isolation

dB

50

Note:

2. 100% on wafer RF test is done at frequency= 37, 38 and 40GHz.