IRF1405ZPBF.. datasheet(8/12 Pages) IRF

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IRF1405Z/S/LPbF

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Fig 17.

Peak Diode Recovery dv/dt Test Circuit for N-Channel

HEXFET® Power MOSFETs

CircuitLayoutConsiderations

• Low Stray Inductance

• Ground Plane

• LowLeakageInductance

Current Transformer

P.W.

Period

di/dt

Diode Recovery

dv/dt

Ripple

≤ 5%

Body Diode

Forward Drop

Re-Applied

Voltage

Reverse

Recovery

Current

Body Diode Forward

Current

VGS=10V

VDD

ISD

Driver Gate Drive

D.U.T. ISD Waveform

D.U.T. VDS Waveform

Inductor Curent

D =

P.W.

Period

* VGS = 5V for Logic Level Devices

VDD

• dv/dt controlled by RG

• Driver same type as D.U.T.

• ISD controlled by Duty Factor "D"

• D.U.T. - Device Under Test

D.U.T

VDS

90%

10%

VGS

td(on)

td(off) tf

VDS

Pulse Width ≤ 1 µs

Duty Factor ≤ 0.1 %

VGS

D.U.T.

10V

-VDD

Fig 18a. Switching Time Test Circuit

Fig 18b. Switching Time Waveforms

IRF1405ZPBF.. 数据表(PDF) 8 Page - International Rectifier

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