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10N30L-TN3-R 数据表(PDF) 3 Page - Unisonic Technologies |
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10N30L-TN3-R 数据表(HTML) 3 Page - Unisonic Technologies |
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3 / 4 page ![]() 10N30 Preliminary Power MOSFET UNISONICTECHNOLOGIESCO.,LTD 3 of 4 www.unisonic.com.tw QW-R502-738.b ELECTRICAL CHARACTERISTICS(Cont.) PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT SWITCHING PARAMETERS Total Gate Charge QG VGS=10V, VDS=120V, ID=10A (Note 1, 2) 28 35 nC Gate to Source Charge QGS 4 nC Gate to Drain Charge QGD 15 nC Turn-ON Delay Time tD(ON) VDD=30V, VGS=10V, ID=1A, RG=25Ω (Note 1, 2) 14 40 ns Rise Time tR 89 190 ns Turn-OFF Delay Time tD(OFF) 81 170 ns Fall-Time tF 81 170 ns SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS Maximum Body-Diode Continuous Current IS 10 A Maximum Body-Diode Pulsed Current ISM 40 A Drain-Source Diode Forward Voltage VSD IS=10A, VGS=0V 1.4 V Notes: 1. Pulse Test: Pulse width ≤ 300µs, Duty cycle ≤ 2% 2. Essentially independent of operating temperature |
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